IRFI4227PBF

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IRFI4227PBF is a type of part from a family of high-voltage MOSFETs from Vishay Intertechnology’s OptiMOS™ product portfolio. The device specifically is an N-channel, power MOSFET with high-voltage, low gate charge and moderate-speed avalanche characteristics. These versatile parts are applicable for a wide range of applications including power switching, motor drive and control, and general high-side and low-side load switching.

At the heart of the device lies a robust voltage-controlled gate structure composed of a vertical N-channel MOS (metal-oxide-semiconductor) transistor. The device is composed of N-type MOS material, its front gate being located on the outside and a P-type substrate on the inside. A positive potential applied to the gate induces an electric field that causes the N-channel to enlarge, allowing current to flow between the drain and the source. This is basically the principle on which FETs or Field Effect Transistors are based.

The Vishay IRFI4227PBF, in particular, is a 75-amp, 175-volt N-channel Power MOSFET made using a 30-V-rated SuperSOT-6 package with a single power tab. Its low gate charge of just 14nC makes it highly efficient for applications requiring high switching speed and high surge capability without the requirement for high gate drive power. This makes it ideal for use in consumer, computing, industrial, and automotive applications.

The device itself is provided with three terminals, namely the Drain (D), Source (S) and Gate (G) terminals. The IRFI4227PBF has an RDS(ON) of just 7mΩ (at 10V and 25°C), an extremely low on-state resistance that makes it ideal for higher power operations. The operating temperature range goes up to 175°C and the package thermal resistance ratio is 0.55°C/W. Its drain-source breakdown voltage is 175V and the gate threshold voltage is 5V.

When the gate-source voltage (VGS) drops to the threshold voltage (Vt, the gate voltage where conduction starts), the current between the drain and source (ID) rises exponentially. This is known as the Transconductance Curve, and defines the way in which the IRFI4227PBF works as a switching power amplifier, controlling the inverted current gain in the channel of an N-channel MOSFET.

Power loss can be minimized with this device by keeping the maximum permissible source-drain voltage to 15V and the total drain current to 77A. Maximum total power dissipation (PD) is defined as the product of the maximum drain current and the maximum source-drain voltage, which is 11.55W. The device comes with a variety of features, such as an Internal Avalanche Energy Rated (EAS) of 70mJ and a fast switching speed of 14ns, making it ideal for high frequency switching applications.

In conclusion, the Vishay IRFI4227PBF is a high-voltage, low gate charge and moderate-speed N-channel MOSFET, designed for power switching, motor drive and control, and general high-side and low-side load switching applications. It features a robust voltage-controlled gate structure composed of a vertical N-channel MOS transistor with an RDS(ON) of just 7mΩ (at 10V and 25°C). Additionally, it has an Internal Avalanche Energy Rating (EAS) of 70mJ and a fast switching speed of 14ns, making it ideal for high frequency switching operations..

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