
Allicdata Part #: | IRFIZ48VPBF-ND |
Manufacturer Part#: |
IRFIZ48VPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 39A TO220FP |
More Detail: | N-Channel 60V 39A (Tc) 43W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220AB Full-Pak |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1985pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 43A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFIZ48VPBF is an advanced, high-performance and high-purity depletion mode MOSFET (metal–oxide–semiconductor field-effect transistor) specifically designed for applications that require low gate power control and low power dissipation. This device is designed with advanced silicon-on-insulator (SOI) technology, which offers superior on-state performance, better gate control, lower gate capacitance, and better thermal performance than conventional silicon MOSFETs.
The IRFIZ48VPBF is a depletion-mode MOSFET, which means it is normally on and needs appropriate bias (voltage) to turn it off. It is widely used in applications requiring low gate power control such as LED lighting, LED panel display backlighting, low-power DC to DC buck converters, and power-on reset circuits. This MOSFET can also be used as a ground-off switch in high-side power switching circuits.
The working principle of the IRFIZ48 is relatively simple and consists of two main parts. The first part is the type of transistor used, which in this case is a depletion type MOSFET. As mentioned previously, this type of transistor is normally on, meaning that it requires some form of bias to turn off. This bias is typically provided by a current source connected to the gate of the transistor. The current source must provide enough current to overcome the voltage at the gate, which is determined by the source-to-drain resistance and the gate-to-source capacitance. If the gate voltage is below the threshold voltage, then the transistor remains on.
The second part of the working principle is the current flow through the drain-source region when the gate is biased. Once the gate voltage is greater than the threshold voltage, the current starts to flow through the drain-source region and the drain voltage will increase proportionally. This increase in drain voltage is used to control devices such as LEDs, motors and others. The current flow through the drain-source region is limited by the on-resistance of the device, which is determined by the operating temperature, applied voltage, and the temperature coefficient of the resistor.
The IRFIZ48VPBF is especially useful in low power applications where both low gate power and low dynamic power dissipation is desired. As mentioned previously, the device is normally on and requires external bias to turn it off. It also has low on-state resistance and relatively low gate capacitance, making it suitable for applications like LED lighting, low power DC-DC converters, and microprocessor power-on reset circuits.
The IRFIZ48VPBF is an excellent choice for applications requiring low gate power, low dynamic power loss, and low on-state resistance. Its excellent thermal performance and low-bias operation make it a perfect fit for low-power applications.
The specific data is subject to PDF, and the above content is for reference
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