| Allicdata Part #: | IRFI540GPBF-ND |
| Manufacturer Part#: |
IRFI540GPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 17A TO220FP |
| More Detail: | N-Channel 100V 17A (Tc) 48W (Tc) Through Hole TO-2... |
| DataSheet: | IRFI540GPBF Datasheet/PDF |
| Quantity: | 1955 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 77 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRFI540GPBF is a type of transistor, more specifically a field-effect transistor (FET). FETs are transistors that control the flow of current in an electronic circuit based on the strength of an electric field. This makes them ideal for switching applications, which is exactly what the IRFI540GPBF is designed for.
The IRFI540GPBF is classified as a single enhancement-mode MOSFET, meaning it is a type of transistor that uses a single gate and has a metal-oxide-semiconductor construction. The gate of the MOSFET is what regulates the flow of current, acting as a switch. When the gate is “on”, current is allowed to flow from the source to the drain. When the gate is “off”, no current is allowed to flow.
The IRFI540GPBF is unique in that it has several internal mechanisms protecting the device from damage. This is why it is so well-suited to the power stage of high-quality audio amplifiers and high-powered amplifier systems. The device has a VGS(th) of 3-7V, which is the gate-source threshold voltage, and a maximum drain source on-state resistance of 0.052Ω. This combination gives the IRFI540GPBF excellent power efficiency and protection against overstressing.
In addition to audio amplifiers, the IRFI540GPBF can also be used in a variety of other applications. These include energy-sensitive solutions such as LED drivers, solar panels, and motor controllers, as well as low-voltage DC/DC converters. As such, the device is suitable for automotive and industrial applications.
The core principle behind how the IRFI540GPBF works is quite simple. When a voltage is applied to the gate, an electric field is generated, which in turn creates an inversion layer in the MOSFET. This inversion layer creates a channel between the source and the drain, which allows current to flow. When the voltage applied to the gate is removed, the inversion layer is removed, stopping the current flow.
The IRFI540GPBF is an example of a single enhancement-mode MOSFET that is well-suited to a variety of audio and power applications. Its internal protective mechanisms make it particularly well-suited for audio amplifiers, LED drivers, solar panels, motor controllers, and DC/DC converters. The core principle behind how the device works is relatively simple: when a voltage is applied to the gate, an inversion layer creates a channel between the source and the drain, allowing current to flow. The device is then “off” once the voltage is removed.
The specific data is subject to PDF, and the above content is for reference
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IRFI540GPBF Datasheet/PDF