Allicdata Part #: | IRFIBG20G-ND |
Manufacturer Part#: |
IRFIBG20G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 1000V TO-220FP |
More Detail: | N-Channel 1000V Through Hole TO-220-3 |
DataSheet: | IRFIBG20G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
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The IRFIBG20G is a popular FET, or Field Effect Transistor, used in various electronics applications. As a single-Junction FET, it is designed to provide a low on-resistance and a low gate-source capacitance. As such, it is often used in applications requiring high switching speeds, high input impedances, or low power consumption. In this article, we\'ll discuss the applications of the IRFIBG20G, its working principles, and how to properly select and use it.
Applications of IRFIBG20G
The IRFIBG20G can be used in several applications where small-signal switching or amplified signals are required. The device is suitable for switching low power analog and digital signals and has a wide range of applications in connectivity, sensing, and automotive applications. Its low on-resistance and low gate-source capacity make it a good choice for hot-swap applications, where it can provide fast switching speeds with minimal off-state drain current. Additionally, its high input impedance can be useful for power source selection, and its low gate capacitance is beneficial for high frequency switching.
It can also be used in applications involving power conversion, amplifiers, and local oscillators, where its high efficiency and thermal stability can provide reliable performance. The device has a wide operating temperature range, making it suitable for industrial and automotive applications, while its low leakage current helps to reduce the power consumption in applications where power management is critical.
Working Principles of IRFIBG20G
The IRFIBG20G operates on the principle of field-effect transistors (FETs), which are unipolar devices that control the flow of charge carriers by varying the applied gate-source voltage. In this case, the IRFIBG20G is a single-junction FET that operates by modulating the current flow between the source and the drain. The device is designed to provide a low on-resistance, allowing for efficient power conversion and regulation. Additionally, its low gate-source capacitance helps to reduce switching delays, making it well-suited for high-frequency applications.
The device can be used in both switching and amplifier circuits. In switching applications, the low on-resistance of the device allows efficient power conversion with minimal power loss. When used as an amplifier, the device is capable of providing higher gain than the common bipolar devices, due to its superior amount of transconductance, or maximum drain current.
Selection and Use of IRFIBG20G
When selecting an IRFIBG20G, it is important to consider several factors, including the operating voltage, drain current, drain-source breakdown voltage, and power dissipation. For example, the operating voltage and drain current should be selected based on the application to ensure that the device can adequately handle the required voltage and current. Other important parameters include the on-resistance and gate-source capacitance, which should be selected based on the desired switching speed and input impedance. Additionally, for applications involving power conversion, it is important to consider the power dissipation and thermal resistance of the device.
Once the appropriate device has been selected, it should be properly installed in the system, taking into account the necessary electrical characteristics. For example, the gate must be properly connected to the source, and the drain should be connected to the appropriate load. Additionally, the device should be securely grounded in order to minimize any noise or EMF that may interfere with the electrical signals.
Conclusion
The IRFIBG20G is a single-junction, FET suitable for various switching and amplifier applications. The device offers low on-resistance and high input impedance, allowing for efficient power conversion and fast switching speeds. Additionally, its low gate-source capacitance is beneficial for high-frequency switching. When selecting and installing the device, it is important to consider several factors, including the operating voltage, drain current, and power dissipation. With proper selection and installation, the IRFIBG20G can provide reliable performance for a variety of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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