IRFL024ZTRPBF Discrete Semiconductor Products

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The IRFL024ZTRPBF is a Silicon N-Channel MOSFET transistor that is widely used in a range of electronic applications.

The IRFL024ZTRPBF has its own unique characteristics that make it exceptionally well suited for certain uses. It is used in power amplifiers and as a switch for audio and video devices. The IRFL024ZTRPBF is a high-performance, low voltage MOSFET, capable of handling up to 600V of DC voltage and up to 100A of current.

The IRFL024ZTRPBF is a single Gate enhancement type MOSFET. A single Gate MOSFET is a transistor whose gate is constructed from a single piece of material, usually silicon. The single Gate MOSFET is usually used for digital logic circuits and for high-speed switching applications. When there is an applied voltage, electrons move from N-doped to P-doped regions and cause a current to flow.

The IRFL024ZTRPBF has a drain source resistance (RDS) of 0.001 Ω. This low RDS results in lower power losses due to heat and better overall efficiency. The gate threshold voltage (VGS) of the transistor is 3V, which makes it ideal for low voltage applications.

The IRFL024ZTRPBF also has an on state drain-source voltage (VDS) of 0.8V and an off state drain-source voltage of 1.0V. These two voltages determine the level at which the MOSFET will switch from on to off and vice versa. In addition to this, the IRFL024ZTRPBF has a maximum drain to source voltage of 600V, allowing for much higher power levels to be handled without damaging the device.

The IRFL024ZTRPBF also has a low power dissipation that is less than 1W and an operating temperature range of -55 °C to +150 °C, making it suitable for a wide range of applications. This transistor is also fairly resistant to electro-static discharge (ESD) which can cause damage to sensitive electronic components.

Overall, the IRFL024ZTRPBF is a highly versatile MOSFET transistor that is capable of handling high power levels with low power losses and can be used in a wide range of applications. Its low gate threshold voltage makes it especially suited for low voltage applications and its high resistance to ESD make it a great choice for sensitive electronic components.

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