IRFL9110TRPBF Allicdata Electronics

IRFL9110TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRFL9110PBFTR-ND

Manufacturer Part#:

IRFL9110TRPBF

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 1.1A SOT223
More Detail: P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surfac...
DataSheet: IRFL9110TRPBF datasheetIRFL9110TRPBF Datasheet/PDF
Quantity: 17500
1 +: $ 0.27000
10 +: $ 0.26190
100 +: $ 0.25650
1000 +: $ 0.25110
10000 +: $ 0.24300
Stock 17500Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 660mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFL9110TRPBF is a highly popular MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a single N-channel logic-level enhancement mode MOSFET that is used in a wide variety of applications, including switch-mode power supplies, motor controllers, and DC/DC converters.

The IRFL9110TRPBF offers an impressive combination of excellent switching performance and large current carrying capability. It has a low on-state resistance of just 1.23 mΩ at 4.5V gate-to-source voltage, which translates to an incredibly low on-state power dissipation of just 152mW. Its maximum drain current rating is 90A and its maximum drain-to-source voltage is 240V. Its maximum gate drive voltage is 25V, and the maximum gate source voltage is +/- 10V. This MOSFET was designed for a wide range of temperature environments, with an operating temperature range of -55°C to 175°C and a maximum junction temperature of 175°C.

The main advantage of using the IRFL9110TRPBF is its very low on-state resistance, which allows it to switch very quickly and efficiently, reducing the amount of power that is dissipated as heat and ensuring high efficiency operation. Its scalability allows manufacturers to use the IRFL9110TRPBF in a wide variety of applications, from small devices to large-scale industrial systems.

The working principle of the IRFL9110TRPBF is based on two transistors, a P-Channel MOSFET and an N-Channel MOSFET. In a static state the two transistors are in a “turned off” state, meaning that current does not flow between them. When a voltage is applied to the gate of the P-Channel MOSFET, it turns on and begins to conduct current. This creates a current path between the source and drain, allowing current to flow. The N-Channel MOSFET also turns on and conducts, completing the current path.

The IRFL9110TRPBF is a versatile and versatile MOSFET that can be used in a wide range of applications, including switch-mode power supplies, motor controllers, and DC/DC converters. Its low on-state resistance and fast switching speed make it particularly suited to high-frequency, high-efficiency applications. Its impressive combination of excellent switching performance and large current carrying capability allows it to easily handle high-power workloads and is a must-have for any designer wishing to make efficient use of their energy.

The specific data is subject to PDF, and the above content is for reference

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