IRFL014 Allicdata Electronics
Allicdata Part #:

IRFL014-ND

Manufacturer Part#:

IRFL014

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 2.7A SOT223
More Detail: N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface...
DataSheet: IRFL014 datasheetIRFL014 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFL014 is a high-voltage N-channel MOSFET, commonly used in power electronics applications. This MOSFET is popular for its high power dissipation and low on-state resistance. It is a single-channel device, meaning it can only control one load at a time. This makes it suitable for applications where switching currents or voltages of up to 500 A and 200 V, respectively, are required.

In order to understand how this device works, it is important to understand how MOSFETs operate. A MOSFET consists of two electrical channels, known as the source and drain. An electric field is created between the source and the drain by an electrical charge (known as the gate). This electric field controls the flow of electrons from the source to the drain, allowing for very precise current control. The gate charge is determined by a voltage placed on the gate terminal, and this allows for the electric field to be adjusted as needed.

The IRFL014 is a high-voltage N-channel MOSFET, meaning that it is capable of switching higher voltages and higher currents than most other types of MOSFETs. It is also able to handle higher peak currents, meaning that it is well suited for applications such as switching power supplies or even motor drives. With its low on-state resistance, this device is also capable of operating at high frequencies, making it ideal for high-speed switching applications.

In order to successfully use this device in a circuit, some attention must be paid to its operating characteristics. The most important of these is the gate drive voltage, which needs to be high enough to ensure that the electric field between the source and the drain is strong enough to control the flow of electrons. In addition, the maximum ratings set by the manufacturer should not be exceeded in order to ensure the safety and performance of the device. Finally, the MOSFET needs to be properly heatsinked to prevent it from overheating, as this can cause permanent damage.

The IRFL014 is an ideal MOSFET for applications such as motor drives, power supplies, and high-speed switching. Its high power dissipation and low on-state resistance make it well suited for high-power applications, while its single-channel nature ensures precision current control. Care must be taken to ensure that the device is used within its specifications in order to ensure safe operation, but with the right precautions, it can be a great choice for power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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