Allicdata Part #: | IRFL110-ND |
Manufacturer Part#: |
IRFL110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 1.5A SOT223 |
More Detail: | N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surfac... |
DataSheet: | IRFL110 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF510 is a type of field-effect transistor (FET). It is an efficient, switching-type transistor consisting of three parts: gate, drain, and source. The gate is usually a gate voltage, which when applied across the gate causes an electric current or charges to flow from the drain to the source. The drain and the source are usually connected to the positive and negative power sources respectively.
The working principle of an IRF510 is that when an electric charge is passed across the gate, electrons are driven into the channel region, which is a region between the source and drain. The electrons then cause a reduction in the resistance between the source and drain, resulting in an increase of current flowing through the transistor. This is known as the on-state, where the transistor is allowing current to pass through it.
When the electric charge is no longer present across the gate, the electrons which have been driven into the channel region are attracted away due to the absence of the voltage. This causes an increase in resistance between the source and drain, and reduces the current flow. This is known as the off-state, and it is what allows the transistor to be used as a switch.
The main application field of IRF510 transistors is power electronics. It can be used in power amplifiers, low-frequency power supplies, high-frequency switching circuits, and also in power conversion applications for regulating AC mains voltage. In addition, IRF510s are great for DC motor control, voltage regulation, and instrumentation applications. It is also used for load sharing and distribution in telecommunication circuits.
The advantages of IRF510 transistors are their efficiency and high power handling capability. They also provide a high switching speed, and can be used at high frequency operating speeds. Additionally, they have extremely low gate-threshold voltage requirements and are durable when used in extreme temperatures. Finally, they can easily be used as an efficient switch between a voltage source and load.
In conclusion, the IRF510 field effect transistor is a high performance, efficient and versatile component for regulating power. It is highly reliable in a wide range of operating conditions, with its high switching speed, low gate-threshold voltage requirement, and its efficient power handling capability. It is also a versatile component which can be used in a wide variety of applications including power amplifiers, instrumentation, voltage regulation, telecommunication circuits, and DC motor control.
The specific data is subject to PDF, and the above content is for reference
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