IRFL1006 Allicdata Electronics
Allicdata Part #:

IRFL1006-ND

Manufacturer Part#:

IRFL1006

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 1.6A SOT223
More Detail: N-Channel 60V 1.6A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRFL1006 datasheetIRFL1006 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF1006 is a type of MOSFETs, specifically single junction field-effect transistors. It is a flow control semiconductor switch, used for switching and amplifying electrical signals. The IRF1006 MOSFET is widely used in numerous applications, due to its low on-state resistance. It is widely used in motor controls, robotics, automotive and industrial automation, as well as many other applications.

Overview of Working Principle

The IRF1006 MOSFET works on the principle of controlling the flow of current through a junction which is formed by the source and drain of the device. A voltage is applied to the gate of the device, which attracts electrons to the gate and forms a barrier between the source and drain. The gate-source voltage (VGS) is what modifies the conductivity between the source and drain, and controlled by the turn-on and turn-off threshold voltages. The turn-on threshold is the voltage at which current starts flowing from source to drain, while the turn-off threshold is the voltage at which current stops flowing.

Operational Advantages of the IRF1006 MOSFET

The IRF1006 is a 3-terminal MOSFET, with the gate being the controlling terminal. This makes it easy to switch on/off the flow of current. The gate of the IRF1006 MOSFET usually does not require any bias voltage for switching, thus making it an ideal choice for low-voltage applications. The power capability delivered by the IRF1006 MOSFETs is higher than other transistors in the same package size due to its low on-state resistance. It has an avalanche rated body diode, thus making it perfect for applications that require high frequency signal switching. Furthermore, it can handle ESD strikes of up to 8 kV without damage.

Applications of the IRF1006 MOSFET

The IRF1006 MOSFET can be used in many applications due to its versatile features. Its low on-state resistance and ability to switch higher currents makes it suitable for motor control applications. It can be used in robotics and industrial automation, such as servo motors, actuators, and position controls. It is also suitable for high-end automotive applications, such as lighting, HVAC, and engine management. Furthermore, it can be used in applications that require higher input and output currents, such as power amplifiers, power converters, and power supplies.

Conclusion

The IRF1006 is a type of single junction MOSFET, which is suitable for many applications due to its low on-state resistance and powerful performance. It can be used in applications that require switching higher currents, such as motor control and robotics. Furthermore, it can also be used in high-end automotive applications, such as lighting and HVAC. The IRF1006 MOSFET is an ideal choice for applications that require low-voltage switching, due to its gate voltage which does not require any bias voltage.

The specific data is subject to PDF, and the above content is for reference

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