IRFL1006TR Allicdata Electronics
Allicdata Part #:

IRFL1006TR-ND

Manufacturer Part#:

IRFL1006TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 1.6A SOT223
More Detail: N-Channel 60V 1.6A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRFL1006TR datasheetIRFL1006TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRFL1006TR is a N-Channel MOSFET transistor device designed for power switching applications. This MOSFET is a reliable, low on-resistance device with a very robust construction and a low power consumption design. A range of size, voltage and current ratings are offered in the IRFL1006TR series.

The IRFL1006TR is mainly used in power supplies, power converters, current sensing, motor control circuits and switching systems. The device is well suited for switching circuits where rapid switching speeds and low power consumption are desired. It is also suitable for load and fault protection in communication systems and computer peripherals.

IRFL1006TR has a P-MOSFET construction, with an N-channel series connection. The device has two N-channel MOSFETs connected in series for power switching and a resistive gate for ESD protection. The two N-Channel MOSFETs are normally "OFF" and when a voltage signal is applied to the gate, the two MOSFETs turn "ON". The device can handle high peak current and has a very low voltage drop.

The device is designed with a symmetric gate structure and built-in EMI filter. This allows it to provide a high degree of common-mode noise immunity. The device also has an integrated temperature protection feature which will detect an over-temperature fault and turn off the device if necessary. By using a logic-driven, recessed gate construction, the IRFL1006TR is able to provide fast turn-on/off response and switching times.

The IRFL1006TR also has a low input to output capacitance which is ideal for switching applications. This reduces power losses due to switching which makes the device more efficient. The device has a low on-state resistance which helps to reduce power dissipation. The device also has a low input capacitance which helps prevent device saturation.

The IRFL1006TR is a high-power rated MOSFET transistor device. It is well suited for use in high-voltage, medium and low power applications. The device is also suitable for use in high- frequency switching applications. The IRFL1006TR offers a high degree of thermal and ESD protection.

The IRFL1006TR is a robust, reliable and efficient device and is the ideal choice for high power switching applications. It has very low power consumption, is highly reliable and has a high degree of ESD protection. The device is well suited for high current switching applications, power supplies and converters, motor control circuits and other applications where low power losses and fast turn-on/off switching are desired.

The specific data is subject to PDF, and the above content is for reference

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