Allicdata Part #: | IRFL210TR-ND |
Manufacturer Part#: |
IRFL210TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 0.96A SOT223 |
More Detail: | N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surfa... |
DataSheet: | IRFL210TR Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 580mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 960mA (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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IRF210TR Application Field and Working Principle
The IRF210TR is an enhancement-mode silicon-gate field effect transistor (FET) designed for general purpose amplifier and high-speed switching applications. It contains a single n-channel field effect transistor with gate-source rated at 500 volts and gate-drain rated at 500 volts.Features
The features of IRF210TR are listed below:- Low gate charge
- Low input capacitance
- Low output capacitance
- High DC current gain
- Low threshold voltage
- Low drain-source on-resistance
- High transconductance
- High switching speed
- Excellent reliability
- High power dissipation
Applications
IRF210TR is widely used in various applications. It is often used as a switch in a variety of electrical circuits. Additionally, it is also used as a power amplifier in audio systems and as a voltage regulator in power supply units.IRF210TR can be used in low-power and high-power switching power conversion, such as:- DC-DC converters
- DC-AC inverters
- DC motor control
- AC driver circuits
Working Principle
The working principle of IRF210TR, as with all field-effect transistors, is based on modulation of the electric field in the transistor\'s source-drain path by the application of a gate voltage. The gate terminal acts as a control electrode, which when placed in close proximity to the source-drain channel modulates the drain current and source voltage.When the gate voltage is below the threshold voltage, the transistor is in the non-conductive state and drain-source connection is blocked. When the gate voltage is increased and reaches the threshold voltage, the channel charge is increased, and the channel electrons start flowing from source to drain resulting in saturation start and current flow from drain to source. This is the conducting or on state of the transistor.Conclusion
The IRF210TR is an enhancement-mode MOSFET that is well suited for high-speed switching and amplifier applications. It combines a low gate charge, low input capacitance, low output capacitance, high DC current gain, and high switching speed with excellent reliability and high power dissipation capability. It can be used in various applications requiring low-power or high-power switching and in audio amplifiers and power supply units as a voltage regulator. Its working principle is based on modulation of the electric field in the transistor\'s source-drain path by the application of a gate voltage.The specific data is subject to PDF, and the above content is for reference
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