Allicdata Part #: | IRFL4105-ND |
Manufacturer Part#: |
IRFL4105 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 3.7A SOT223 |
More Detail: | N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRFL4105 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFL4105 Application field and Working Principle
IRFL4105 is a general-purpose N-channel MOSFET, which is manufactured by International Rectifier. It is a very versatile device with many applications, ranging from regulated low-power converters to high-power battery-operated devices.
The technology used in the manufacture of IRFL4105 is the Si-MOS technology. This provides a high current density, as well as low ‘on’ resistance. To ensure that the device performs optimally, its package is also tuned for maximum power performance. This includes a dielectric constant of 5.0 and a power dissipation of 0.5 W/m2.
Applications
The IRFL4105 is ideal for use in a number of different applications, including:
- DC-DC switching converters
- Power MOSFETs for audio and RF amplifiers
- High Frequency switching for SMPS applications
- Battery operated applications (as it has a low-power consumption)
- Reliable and robust for automotive use.
Due to its wide range of applications, the IRFL4105 can be used as a single device, or it can be used in parallel with other Si-MOS devices, such as the IRF3205. This will enable more current to pass through the device, allowing it to be more efficient. Furthermore, its large gate capacitance allows it to switch faster, providing improved transient response.
Internals
The IRFL4105 MOSFET contains two extended bodies, each made from a monolithic semiconductor. The body is formed by a N-channel MOSFET, connected by a common ‘gate’. When a positive potential is applied to the gate, the semiconductor becomes conductive, allowing electrons to flow from source to drain. In this way, the device operates as an electronic switch.
The other important components of the MOSFET are the drain and the source. The drain and source act as reservoirs, from which the charge carriers (electrons and holes) are moved. The body and source are connected using an extended metal oxide semiconductor (MOS) layer, which ensures low ‘off’ resistance, high mobility and fast switching speeds.
Characteristics
The IRFL4105 has a number of different characteristics, which make it an ideal choice for applications such as those described above. These include:
- Operating Voltage Range: -20V to -100V
- Operating Temperature Range: -55°C to 125°C
- Non-Volatile: Yes
- Polarization Voltage: -24V
- Gate Threshold Voltage: -6V
The low operating voltage range and wide temperature range make the IRFL4105 suitable for use in a variety of conditions. Furthermore, its non-volatility ensures that the device will retain its configuration even after power is removed. This makes the IRFL4105 an ideal choice for applications that require reliability and dependability.
Conclusion
The IRFL4105 is a very versatile general-purpose N-channel MOSFET. It is suitable for use in a variety of applications, from low-power converters to high-power battery-operated devices. Its extended body design provides high-current density and its wide operating temperature range makes it suitable for a variety of conditions. Furthermore, its low-voltage requirements and non-volatility make it an ideal choice for applications that require reliability and dependability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRFL4105TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 3.7A SOT2... |
IRFL4310TR | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 1.6A SOT... |
IRFL014 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRFL014TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRFL110 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRFL110TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRFL210 | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 0.96A SO... |
IRFL210TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 200V 0.96A SO... |
IRFL214 | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 790MA SO... |
IRFL9014 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.8A SOT2... |
IRFL9014TR | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 1.8A SOT2... |
IRFL9110 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 1.1A SOT... |
IRFL9110TR | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 1.1A SOT... |
IRFL4105 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 3.7A SOT2... |
IRFL024N | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
IRFL1006 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
IRFL014NPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 1.9A SOT2... |
IRFL014PBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
IRFL110PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 1.5A SOT... |
IRFL214PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 250V 790MA SO... |
IRFL9014PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 1.8A SOT2... |
IRFL9110PBF | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 1.1A SOT... |
IRFL024NTR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
IRFL1006TR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
IRFL214TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 790MA SO... |
IRFL4315 | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 2.6A SOT... |
IRFL024Z | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 5.1A SOT2... |
IRFL1006PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
IRFL024ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 5.1A SOT2... |
IRFL024NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
IRFL4105PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 3.7A SOT2... |
IRFL4315TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 2.6A SOT... |
IRFL014NTRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 1.9A SOT2... |
IRFL110TRPBF | Vishay Silic... | -- | 7500 | MOSFET N-CH 100V 1.5A SOT... |
IRFL9014TRPBF | Vishay Silic... | -- | 5000 | MOSFET P-CH 60V 1.8A SOT2... |
IRFL024NTRPBF | Infineon Tec... | -- | 2500 | MOSFET N-CH 55V 2.8A SOT2... |
IRFL4310PBF | Infineon Tec... | -- | 1533 | MOSFET N-CH 100V 1.6A SOT... |
IRFL4315PBF | Infineon Tec... | -- | 1621 | MOSFET N-CH 150V 2.6A SOT... |
IRFL4105TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 3.7A SOT2... |
IRFL014TRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
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