IRFL4105 Allicdata Electronics
Allicdata Part #:

IRFL4105-ND

Manufacturer Part#:

IRFL4105

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 3.7A SOT223
More Detail: N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRFL4105 datasheetIRFL4105 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFL4105 Application field and Working Principle

IRFL4105 is a general-purpose N-channel MOSFET, which is manufactured by International Rectifier. It is a very versatile device with many applications, ranging from regulated low-power converters to high-power battery-operated devices.

The technology used in the manufacture of IRFL4105 is the Si-MOS technology. This provides a high current density, as well as low ‘on’ resistance. To ensure that the device performs optimally, its package is also tuned for maximum power performance. This includes a dielectric constant of 5.0 and a power dissipation of 0.5 W/m2.

Applications

The IRFL4105 is ideal for use in a number of different applications, including:

  • DC-DC switching converters
  • Power MOSFETs for audio and RF amplifiers
  • High Frequency switching for SMPS applications
  • Battery operated applications (as it has a low-power consumption)
  • Reliable and robust for automotive use.

Due to its wide range of applications, the IRFL4105 can be used as a single device, or it can be used in parallel with other Si-MOS devices, such as the IRF3205. This will enable more current to pass through the device, allowing it to be more efficient. Furthermore, its large gate capacitance allows it to switch faster, providing improved transient response.

Internals

The IRFL4105 MOSFET contains two extended bodies, each made from a monolithic semiconductor. The body is formed by a N-channel MOSFET, connected by a common ‘gate’. When a positive potential is applied to the gate, the semiconductor becomes conductive, allowing electrons to flow from source to drain. In this way, the device operates as an electronic switch.

The other important components of the MOSFET are the drain and the source. The drain and source act as reservoirs, from which the charge carriers (electrons and holes) are moved. The body and source are connected using an extended metal oxide semiconductor (MOS) layer, which ensures low ‘off’ resistance, high mobility and fast switching speeds.

Characteristics

The IRFL4105 has a number of different characteristics, which make it an ideal choice for applications such as those described above. These include:

  • Operating Voltage Range: -20V to -100V
  • Operating Temperature Range: -55°C to 125°C
  • Non-Volatile: Yes
  • Polarization Voltage: -24V
  • Gate Threshold Voltage: -6V

The low operating voltage range and wide temperature range make the IRFL4105 suitable for use in a variety of conditions. Furthermore, its non-volatility ensures that the device will retain its configuration even after power is removed. This makes the IRFL4105 an ideal choice for applications that require reliability and dependability.

Conclusion

The IRFL4105 is a very versatile general-purpose N-channel MOSFET. It is suitable for use in a variety of applications, from low-power converters to high-power battery-operated devices. Its extended body design provides high-current density and its wide operating temperature range makes it suitable for a variety of conditions. Furthermore, its low-voltage requirements and non-volatility make it an ideal choice for applications that require reliability and dependability.

The specific data is subject to PDF, and the above content is for reference

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