IRFL9014TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFL9014PBFTR-ND |
Manufacturer Part#: |
IRFL9014TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 1.8A SOT223 |
More Detail: | P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface... |
DataSheet: | IRFL9014TRPBF Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFL9014TRPBF is a Field-Effect Transistor (FET). A FET is a semiconductor device that is a key component of electronic circuitry and is used to amplify and switch electronic signals. FETs are made up of either two or three layers of semiconductor material and are used to control the flow of electrons or current. The IRFL9014TRPBF is an N-Channel MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It can be considered a type of transistor, as it is capable of controlling a large amount of current, depending on its application. The IRFL9014TRPBF has an interesting design due to its structure. A MOSFET is composed of a P-type substrate, an N-type drain, and a gate structure.
The IRFL9014TRPBF MOSFET is a field-effect transistor that can be used in a variety of applications. It is commonly used in switching and amplification applications, as well as audio power amplifiers and power supply regulation. The IRFL9014TRPBF MOSFET is well suited for these types of applications due to its low-voltage threshold and low on-resistance. It is able to be used in very low-voltage applications, allowing for increased flexibility in circuit design. The IRFL9014TRPBF MOSFET is also able to provide a high current capability, allowing it to be used in applications that have high power requirements as well.
The IRFL9014TRPBF MOSFET works by having a voltage applied to the gate, which opens or closes the channel. This channel is connected to the source and the drain, allowing for current to flow through it. When the channel is open, current may flow through the channel, allowing for a voltage drop across the MOSFET. When the channel is closed, current is prevented from flowing.
The IRFL9014TRPBF MOSFET is a key component in any electronic system. Its ability to handle high currents and low voltages, as well as its low on-resistance, make it ideal for numerous applications. Its ability to control the flow of electricity makes it an essential building block of any electronic circuit. By controlling the flow of current, the IRFL9014TRPBF MOSFET can be used to change the electrical properties of a system, allowing for enhancements that weren\'t possible before.
The IRFL9014TRPBF is a single FET semiconductor device that is able to give electronics engineers more control over their designs. Its low on-resistance and voltage threshold make it ideal for the majority of applications. The IRFL9014TRPBF is an indispensable part of modern electronics and its ability to handle high power signals with ease ensures its continued use in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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