Allicdata Part #: | IRFL9014TR-ND |
Manufacturer Part#: |
IRFL9014TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 1.8A SOT223 |
More Detail: | P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface... |
DataSheet: | IRFL9014TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFL9014TR is a low-cost N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to deliver superior performance and durability. As a member of the company’s Power MOSFET family, it is designed to provide maximum performance when used in applications requiring low current drain, low gate drive levels, and also low thermal resistance. IRFL9014TR is frequently used in portable electronic devices like power supply, amplifier, switching circuits and motor drivers.
A drain-source voltage of up to 60V and a gate-source voltage of up to 20V make the IRFL9014TR suitable for a wide range of applications. Its superior characteristics such as low on-state resistance, low gate charge, low gate-source capacitance, and low gate-source leakage current capabilities, makes it ideal for use in power management applications such as DC/DC converters, H-bridge drivers, voltage regulators, and load switches.
Additionally, the IRFL9014TR features excellent thermal performance and the option of an internal E-MOSFET which reduces the total thermal resistance from junction to ambient. It also offers very low power losses and superior power capacitance due to its high temperature operating range of -55°C to +175°C. Other features include a very low RTH (Thermal Resistance) and high frequency operation.
The IRFL9014TR uses the standard MOSFET working principle. It is based on four-layer construction of semiconductor material along with three terminals: source, gate, and drain. The Gate, as the control terminal, is used to regulate the flow of current through the MOSFET. The voltage applied to the Gate determines whether the current flowing between source and drain is allowed to pass or not. When the gate-to-source voltage (VGS) is higher than the threshold voltage (Vth), the MOSFET will be turned on and drain current (ID) will flow from source to drain. When the gate-to-source voltage is below the threshold voltage, the MOSFET will be turned off and no drain current will flow.
The gate-to-source voltage (VGS) also affects the voltage drop between source and drain (VDS). When the VGS is greater than the threshold voltage (Vth), the drain current will increase with increased VGS. However, the voltage drop between source and drain (VDS) will be kept constant, as the resistance between source and drain is low. This feature of low voltage drop makes the IRFL9014TR ideal for switching and power management applications.
The IRFL9014TR also has an excellent temperature coefficient. This means that when the operating temperature increases, the parameters of the device will remain relatively constant. This allows the device to be used in applications where temperature fluctuations are frequent and power supplies are limited. Additionally, the IRFL9014TR offers superior protection against electrostatic discharges and is able to withstand high inrush currents.
The IRFL9014TR is an ideal choice for any application requiring a low-power, low-cost solution for power management or switching. Its low gate charge, low on-state resistance, and low voltage drop make it an ideal choice for any application where power efficiency and performance are desired. Additionally, its superior temperature coefficient and excellent electrostatic discharge protection make it one of the best MOSFETs available on the market.
The specific data is subject to PDF, and the above content is for reference
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