IRFL110TR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 3.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	180pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	540 mOhm @ 900mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF110TR Application Field and Working Principle

The IRF110TR N-channel enhancement type MOSFET transistor is gaining widespread popularity for its affordable cost, simplicity and flexibility.This device can be used for low power switching and amplifier applications, as well as input stages for small signal driving.It offers a wide range of features and benefits for users. In particular, its low input capacitance offers high speed switching performance, while its superior thermal characteristics allow for reliable operation.The IRF110TR is designed to offer a robust and reliable solution for current, voltage and power monitoring. This device is able to source and sink current to switch loads.The IRF110TR has an extremely low capacitance at the terminals, making it suitable for high speed switching applications.It can be used to drive MOSFETs, detect short circuit faults and open circuit faults, implement current limiting and overcurrent detection, protect against over-temperature conditions and provide protection against over-voltage and under-voltage conditions.In order to understand the working principle of the IRF110TR device, we need to look into the structure of the device.The IRF110TR is a three terminal N-channel enhancement type MOSFET. The three terminals of the device are the source, gate and drain terminals.The source terminal is connected to a common ground, while the drain terminal is connected to the power supply. An internal electric potential is generated between the gate and source terminals, which causes the electrons near the gate to move from one side to the other.The gate terminal of the device is kept at a higher potential than the source terminal, which causes a depletion region to be formed at the gate-source junction. This depletion region prevents the electrons from moving freely between the two terminals and hence prevents the flow of current.In order to make the IRF110TR device work, the gate terminal must be held at the same voltage as the source terminal. This causes the electrons to be able to move freely between the two terminals, allowing current to flow through the device.The gate terminal of the IRF110TR device is also designed to be able to handle high voltage, which allows it to be used in circuits that require higher voltages.The IRF110TR device is an ideal choice for applications such as logic switching, level shifting, current sensing, voltage protection and power monitoring.Its low input capacitance and low power consumption make it an ideal device for implementing small signal amplifiers.The device is also ideal for applications such as Bluetooth, Wi-Fi and RF switches since its low on-state resistance ensures reliable and high speed switching performance.In addition, its low input capacitance improves the immunity to noise, allowing the device to operate reliably in noisy environments.Overall, the IRF110TR device is an ideal choice for a wide variety of applications due to its low cost, simple structure, and ease of use.

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