IRFL024NTRPBF Discrete Semiconductor Products

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An IRF024NTRPBF is a single-N-Channel enhancement-mode MOSFET from the IRF024 series, made by Infineon Technologies. It has a high-performance composite system structure and is designed for power management applications. This MOSFET is optimized for fast switching applications and has several features that make it ideal for a wide range of applications.

The IRF024NTRPBF features a drain-source breakdown voltage of 60V, an avalanche energy of 3.2mJ, and a typical drain-source on-resistance of 760mΩ. It has a maximum continuous drain current of 14.7A as well as a maximum drain-source voltage of 45V. It is capable of operating at temperatures ranging from -55°C to +150°C and has a high threshold voltage of 2.1V.

The IRF024NTRPBF is used to construct high-side drivers, such as for gate drivers, control circuits, and regenerative clamp circuits in end products like automotive applications, power supplies for cellphones, IT equipment, and consumer electronics. It can also be used in motor drives and general switching applications.

The IRF024NTRPBF is a MOSFET that uses the principle of voltage enhancement to switch between different states. The gate terminal of this MOSFET is connected to the voltage source. When a low voltage is applied to the gate terminal, it creates an inversion layer between the source and drain and allows the drain terminal to be pulled to the source potential. The current between the source and drain is determined by the applied voltage and the drain terminal is limited by the source current. With a higher voltage at the gate, the MOSFET can switch more current between the source and drain.

The IRF024NTRPBF uses thermally stable materials as well as advanced design and process technologies to enhance switching performance and reduce power dissipation. It is designed to operate under very low RDS-on and is suitable for high-side drivers requiring fast switching times. The high threshold voltage and avalanche energy of the IRF024NTRPBF make it ideal for applications where the device will be exposed to high voltages and high energy discharges.

The IRF024NTRPBF is highly reliable and is ideal for a wide range of power management and switching applications. Its fast switching performance, high-temperature and avalanche resistance, as well as high drain-source on-resistance, make it ideal for a wide range of applications.

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