| Allicdata Part #: | IRFL210PBF-ND |
| Manufacturer Part#: |
IRFL210PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 0.96A SOT223 |
| More Detail: | N-Channel 200V 960mA (Tc) 2W (Ta), 3.1W (Tc) Surfa... |
| DataSheet: | IRFL210PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 580mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 960mA (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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The IRFL210PBF is a depletion mode, high-performance N-Channel MOSFET transistor. The transistor is commonly utilized for special applications, such as in switchmode power supplies and Amplifier circuits. It is primarily used for high-speed switching and amplifier and enhancement applications, where low gate charge and low Miller capacitance are required.
The IRFL210PBF transistor is available in three different packages, including the TO-220F, TO-252AA (D-PAK) and TO-254AA (I-PAK) packages. The transistor has a nominally rated power dissipation at 25°C of 45W on a FR-4 board. It offers excellent thermal stability and high channel mobility, and its design ensures low on-resistance and high avalanche capability.
The IRFL210PBF is a single-N-Channel enhancement mode MOSFET which features a maximum Positive Gate Threshold Voltage (VGS) of 6V and a maximum Drain-to-Source On-State Resistance (RDS(on)) of 0.092 Ohms at a VGS of 10V. It features an optimized flat body for improved thermoelectric effect, and its substrate is protected against avalanche break latch-up. The transistor can withstand a maximum transistor voltage (VDS) of 500V with a drain current (ID) of 94A.
The IRFL210PBF is versatile and can operate in a wide range of applications. It can be used as a high-speed switch in motor control circuits, motor drives, power converters and power switching circuits. It can also be used in low-power consumer electronics, such as mobile phones and audio/video applications. In addition, the IRFL210PBF can also be used in various amplifiers, such as Class-AB amplifiers.
The working principle of the IRFL210PBF is the same as any other FET device. When a voltage is applied to the gate, a depletion layer is created, which depletes the majority carriers from the channel between the source and the drain. This reduces the current flow between the two terminals and can block it altogether if the voltage is sufficient. The IRFL210PBF is a depletion mode transistor, meaning that the threshold voltage (VGS) required to create the depletion layer is very low. This allows for the transistor to be used for applications such as switchmode power supplies, where there are very low voltage drops across the switches.
The IRFL210PBF is a reliable and cost-effective MOSFET transistor that can be used in various high-power applications. Its low temperature coefficient and low gate charge help reduce power consumption while improving performance. Its optimized flat body design helps to improve its power handling and its substrate is also protected against avalanche break latch-up, which helps improve reliability. The IRFL210PBF is a great choice for applications such as switchmode power supplies, motor drives, amplifiers and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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IRFL210PBF Datasheet/PDF