Allicdata Part #: | IRFL024ZPBF-ND |
Manufacturer Part#: |
IRFL024ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 5.1A SOT223 |
More Detail: | N-Channel 55V 5.1A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRFL024ZPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 57.5 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRFL024ZPBF is a type of high voltage, power field-effect transistor (FET) manufactured by International Rectifier. It belongs to the group of MOSFETs and is also known as an Insulated Gate Bipolar Transistor (IGBT). A FET is a unipolar semiconductor device that utilizes the flow of electric current in one direction to control the flow of current in the opposite direction. This controlling action allows a FET to act as an amplifier, switch, or modulator.
Generally speaking, the IRFL024ZPBF is used in a wide range of applications, especially those related to power. These include motor control, inverter, UPS, and automotive electronics. In these applications, it acts as an interface between two components, controlling the current flow, or as a switch that connects and disconnects the two components. Depending on the specifics of the application, the characteristics and operating voltage requirements of the IRFL024ZPBF may vary.
The IRFL024ZPBF consists of a source and drain, two insulated gates, a channel, and a substrate. When an electric voltage is applied to the gate electrode, it creates an inversion layer in the semiconductor channel that acts as a conductor. The current passes from the source to the drain through this conducting channel, allowing the current in the opposite direction to be effectively blocked. By controlling the voltage supplied to the gate electrode, this current flow can be regulated.
Aside from its ability to function as an amplifier, switch or modulator, the IRFL024ZPBF also has excellent electrical properties. These include high blocking voltage and high forward current capabilities, which allows it to be used in power-handling applications. It also has a fast switching speed, given its low gate resistance. Other characteristics include good breakdown voltage and a low off-state leakage current.
In conclusion, the IRFL024ZPBF is an excellent choice for a wide range of power-related applications such as motor control, inverter, UPS, and automotive electronics. Its high-voltage, power-handling capabilities and fast switching speed allow it to be used in demanding applications, and its excellent electrical properties give it an edge over other types of MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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IRFL024ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 5.1A SOT2... |
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