Allicdata Part #: | IRFL9014PBF-ND |
Manufacturer Part#: |
IRFL9014PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 1.8A SOT223 |
More Detail: | P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface... |
DataSheet: | IRFL9014PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRFL9014PBF, also known as “international rectifier 9014 series” is part of an extensive line of advanced MOSFET and diode products for a variety of applications. IRFL9014PBF is covered with a great selection of ratings and features making it suitable for use in medium power circuits.
IRFL9014PBF is a fast HEXFET power MOSFET, manufactured by International Rectifier, with a breakdown voltage of 9 V. It has been designed to optimize electrical performance and protect against gate oxide breakdown. It also provides reliable operation at elevated temperature as well as good power and thermal management capabilities. These features make this device ideal for use in a variety of applications, including switching and power Distribution.
The IRFL9014PBF is a single N-channel HEXFET Power MOSFET. This device combines fast switching performance with low maximum on-state resistance to ensure that the power loss during conduction is minimized. The device is capable of handling high-speed switching operations and can be used in power distribution and switching applications such as uninterruptible power supplies, medical diagnostics and instrumentation, office equipment and consumer electronics.
The working principle of the IRFL9014PBF is based on the interaction between the gate voltage and the channel between the drain and source of the device. When a positive voltage is applied to the gate of the device, the gate-to-channel voltage induces a change in the density of electron carriers in the channel, leading to a change in the device\'s resistance. As the gate voltage is increased, the electrons leave the channel, reducing the resistance of the device, allowing for more current to pass through. As the gate voltage is decreased, the electrons enter the channel and increase the resistance of the device, limiting the current passing through it.
In addition to its general-purpose applications, the IRFL9014PBF can also be used in automotive applications such as fuel control, pump control, and inverter circuits. It can also be used in consumer applications where high power switching operations are needed, such as power supply and DC-DC converters. The IRFL9014PBF can be used in a variety of other applications as well, including DC-AC inverters and power factor correction.
The fast switching performance and low maximum on-state resistance of the IRFL9014PBF make it an ideal choice for applications that require fast switching operations. Its excellent thermal and power management capabilities make it suitable for use in demanding situations such as automotive and consumer applications. The device also comes with built-in protection against gate oxide breakdown, which is a common problem with other MOSFETs. Overall, the IRFL9014PBF is an excellent choice for a variety of applications, offering excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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