IRFL4315TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFL4315TRPBFTR-ND |
Manufacturer Part#: |
IRFL4315TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 2.6A SOT223 |
More Detail: | N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount S... |
DataSheet: | IRFL4315TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 1.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.IRFL4315TRPBF transistors are widely used in modern electronics. This type of transistor is a single, field-effect device that relies on a voltage, rather than a current, to control a small current flow. With its low on-resistance and ability to be used in high-frequency applications, the IRFL4315TRPBF is a popular choice for modern-day electronics.
The main application area for IRFL4315TRPBF transistors is in switching and power management. These transistors are often used in power converters and power supply designs as well as for phase-control circuits and for switching applications. Additionally, IRFL4315TRPBF transistors are used in commercial power supply modules, such as those produced by companies like National Semiconductor and Texas Instruments, to control the output power of the module.
The working principle of the IRFL4315TRPBF is relatively simple compared to other types of transistors. The transistor contains a source terminal, a gate terminal, and a drain terminal. When the gate voltage is below the threshold voltage, the transistor is called “off” and no current flows through the transistor. When the gate voltage is above the threshold voltage, the transistor is switched “on”, allowing current to flow through the source and drain terminals.
The IRFL4315TRPBF transistor also incorporates a process known as “punch through”. This process allows the device to be used in high-frequency applications. Punch through works by inversely proportionalizing the gate resistance to a lower value, so the voltage waveform can easily switch between off and on states to provide the quick transitions required for high-speed applications.
The versatility of the IRFL4315TRPBF transistor makes it a great choice for applications in power management. Its low on-resistance, low capacitance, and quick switching capabilities make it perfect for high-frequency designs. Additionally, its increased breakdown voltage and low power loss allow for it to be used in higher power applications. As a result, the IRFL4315TRPBF can be seen in a variety of electronics in applications ranging from consumer electronics to industrial use.
The specific data is subject to PDF, and the above content is for reference
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