Allicdata Part #: | IRFL024NPBF-ND |
Manufacturer Part#: |
IRFL024NPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 2.8A SOT223 |
More Detail: | N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRFL024NPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.3nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRFL024NPBF is a highly popular N-Channel Power MOSFET (PMOS) often used in applications such as motor drivers, industrial motor control, lighting, audio and low-side switching applications. The IRFL024 power MOSFET offers a wide range of features, including low on-state resistance, high injection efficiency and ruggedness. The IRFL024 is also a great choice for high current applications as it has quite low gate threshold voltage (V GS ) and R DS(on) values.The IRFL024 is a depletion-mode power MOSFET that is designed to be used as a pass device in circuit designs. Its structure involves a N-channel MOSFET structure with a P-substrate diode integrated into it, which helps the device to remain stable and not latch up in any operating temperature range.In terms of construction, the IRFL024 consists of three layers: a gate layer, a body layer, and a substrate layer. The gate layer has a metal-oxide semiconductor (MOS) structure and is responsible for controlling the flow of current through the MOSFET.The body layer is a silicon-dioxide layer, which has a high dielectric constant. The substrate layer, which is the last layer, is an intrinsic body layer and provides a low resistance path for electrons, which results in higher efficiency.Functionally, the power MOSFET works through two main mechanisms: the intrinsic body diode and the gate-source capacitance. The intrinsic body diode of the power MOS is responsible for the flow of current during reverse bias and helps to control the current flow with low voltage drop, while the gate-source capacitance helps to control the current through the power MOSFET.When the gate voltage (V GS ) is increased, the gate-source capacitance increases and this in turn decreases the resistance of the power MOS, allowing current to flow through the device. On the other hand, when the V GS is decreased, the gate-source capacitance reduces and the resistance increases, resulting in an increase in the threshold voltage (V TH ), thus decreasing the current through the power MOS.The IRFL024NPBF is a very versatile and reliable power transistor for many types of applications. Its low R DS(on) value and high efficiency make it a great choice for high current applications, while its depletion-mode structure ensures that it will remain stable regardless of the operating temperature range. Additionally, the intrinsic body diode helps to keep current flow under control, even with low voltage drops, making the IRFL024 a great choice for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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