IRFL024NPBF Allicdata Electronics
Allicdata Part #:

IRFL024NPBF-ND

Manufacturer Part#:

IRFL024NPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 2.8A SOT223
More Detail: N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRFL024NPBF datasheetIRFL024NPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRFL024NPBF is a highly popular N-Channel Power MOSFET (PMOS) often used in applications such as motor drivers, industrial motor control, lighting, audio and low-side switching applications. The IRFL024 power MOSFET offers a wide range of features, including low on-state resistance, high injection efficiency and ruggedness. The IRFL024 is also a great choice for high current applications as it has quite low gate threshold voltage (V GS ) and R DS(on) values.The IRFL024 is a depletion-mode power MOSFET that is designed to be used as a pass device in circuit designs. Its structure involves a N-channel MOSFET structure with a P-substrate diode integrated into it, which helps the device to remain stable and not latch up in any operating temperature range.In terms of construction, the IRFL024 consists of three layers: a gate layer, a body layer, and a substrate layer. The gate layer has a metal-oxide semiconductor (MOS) structure and is responsible for controlling the flow of current through the MOSFET.The body layer is a silicon-dioxide layer, which has a high dielectric constant. The substrate layer, which is the last layer, is an intrinsic body layer and provides a low resistance path for electrons, which results in higher efficiency.Functionally, the power MOSFET works through two main mechanisms: the intrinsic body diode and the gate-source capacitance. The intrinsic body diode of the power MOS is responsible for the flow of current during reverse bias and helps to control the current flow with low voltage drop, while the gate-source capacitance helps to control the current through the power MOSFET.When the gate voltage (V GS ) is increased, the gate-source capacitance increases and this in turn decreases the resistance of the power MOS, allowing current to flow through the device. On the other hand, when the V GS is decreased, the gate-source capacitance reduces and the resistance increases, resulting in an increase in the threshold voltage (V TH ), thus decreasing the current through the power MOS.The IRFL024NPBF is a very versatile and reliable power transistor for many types of applications. Its low R DS(on) value and high efficiency make it a great choice for high current applications, while its depletion-mode structure ensures that it will remain stable regardless of the operating temperature range. Additionally, the intrinsic body diode helps to keep current flow under control, even with low voltage drops, making the IRFL024 a great choice for many power switching applications.

The specific data is subject to PDF, and the above content is for reference

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