IRFL4105TR Allicdata Electronics

IRFL4105TR Discrete Semiconductor Products

Allicdata Part #:

IRFL4105TR-ND

Manufacturer Part#:

IRFL4105TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 3.7A SOT223
More Detail: N-Channel 55V 3.7A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRFL4105TR datasheetIRFL4105TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFL4105TR is an advanced transistor produced by International Rectifier Corporation, which is a very reliable and suitable electrical component for different application fields. This transistor is a single N-channel MOSFET which is specially designed for power management, battery management, lighting and other building and industrial applications in which high current and low on-resistance is required.

The IRFL4105TR has an insulated gate that prevents electricity or current from passing through it and also allows control over the flow of current. This transistor is an improved version from prior transistors featuring a low on-resistance and high current capabilities, which makes it ideal for usage in several applications.

At the heart of the IRFL4105TR MOSFET are the three layers, which are referred to as the source, drain and gate. The source is the input side which has a positive voltage and the drain is the output side, while the gate is the control side which separates the connection between the source and drain. When the gate is left open, no current will flow through the transistor, but when the gate is tightly closed, current is allowed to flow.

The IRFL4105TR has a variety of useful application fields which vary from linear power supply regulation and switching, DC to DC converter control, audio amplifier control, battery management, lighting and general purpose high side switching, robotics and human-machine interfaces, and ASICs.

This MOSFET’s working principle involves the operation of a gate, which is controlled by voltage applied to the Gate terminal. In this MOSFET, voltage applied to the gate terminal directly affects the conduction across the Source-Drain path. A positive voltage to the gate terminal causes a current to flow between the source and drain, while a negative gate voltage blocks current conduction. In this sense, the gate acts as an electronic switch which can open or close electrical connection between the source and drain.

The IRFL4105TR is the most popular and reliable MOSFET available today, due to its small size, high robustness and low power consumption. It is suitable for various advanced applications which require current handling, low on-resistance, high switching speed and low gate-to-source capacitance. It is popular for the high level of consistency and performance that it offers.

The IRFL4105TR is a powerful and reliable transistor that is suitable for a range of application fields. It is capable of a low resistance, high current/switch and low gate-to-source capacitance that make it an ideal choice for advanced applications. This MOSFET’s working principle revolves around the control of a gate voltage applied to a connected source and drain, which allows it to open and close the electrical conduction between them.

The specific data is subject to PDF, and the above content is for reference

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