IRFL4310PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	330pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	200 mOhm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.6A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRFL4310PBF Application Field and Working Principle

The IRFL4310PBF is a N-channel Enhancement Mode Field Effect Transistor (NMOSFET) manufactured by International Rectifier Corporation (IR). It is a single-gate device, with a high-voltage, high-current performance that makes it suitable for a wide variety of applications, including power management, Lighting, Audio/Visual, and Switching systems.The IRFL4310PBF has a source-drain breakdown voltage of 55V, a current rating of 30A, and a gate threshold voltage of 3.1V. It also features an on-resistance of 2.95Ω and an off-state gate leakage current of 1nA. These features make it ideal for applications where high accuracy and low gate charge are desired.The working principle of the IRFL4310PBF is based on the basic principle of a FET, which is to convert electrical signals from one form to another. This is accomplished by manipulating the flow of electrons through the transistor, which is in turn dependent on the voltage applied to the gate. When the voltage applied to the gate is sufficiently high, it will “turn-on” the transistor, allowing current flow. When the gate voltage is reduced, the transistor will “turn-off”, stopping current flow.The IRFL4310PBF is used in a variety of power management applications, such as voltage conversion and power-supply sequencing. It is an ideal choice for AC-DC converters, DC-DC converters, switch-mode power supplies, and voltage regulators. Additionally, its low-on-resistance capabilities make it suitable for high-current switching applications, such as motor control and other motor drive circuits. Its high breakdown voltage and low gate charge make it a good choice for high voltage applications where fast switching is desired.The IRFL4310PBF is also used in various audio/visual (AV) applications, from amplifiers to analog and digital mixers, as well as various types of lighting systems, such as LED lighting and automotive headlights. Its capacitance and inductance characteristics make it well-suited for high-frequency switching of signals, providing better sound quality and consistent lighting levels.The IRFL4310PBF also offers a number of important safety features. Its avalanche performance and ESD protection capabilities are impressive, while its silicon-carbide substrate helps provide excellent thermal and electrochemical stability. In addition, its low reverse-body diode leakage current ensures reliable operation in high voltage and high power circuits.Overall, the IRFL4310PBF is a reliable and versatile single-gate NMOSFET device. It is well-suited for a wide range of applications, from power management, voltage conversion, and power-supply sequencing, to audio/visual systems, lighting, and motor control applications. Its high breakdown voltage, low gate charge, and excellent avalanche and ESD protection capabilities make it an excellent choice for a variety of applications.

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