Allicdata Part #: | IRFL214TR-ND |
Manufacturer Part#: |
IRFL214TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 790MA SOT223 |
More Detail: | N-Channel 250V 790mA (Tc) 2W (Ta), 3.1W (Tc) Surfa... |
DataSheet: | IRFL214TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 470mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 790mA (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF214TR is a single-level enhancement mode Field Effect Transistor (FET) used in many applications. It is a voltage controlled FET with a typical maximum current carrying capacity of 100 mA and operating temperature of -55 to 150 degrees Celsius. It is a N-channel enhancement mode FET with a drain-source voltage rating of 30V, a drain-gate voltage rating of 30V and a gate-source voltage rating of 20V.
The IRF214TR can be used as a switch or amplifier due to its high switching speed and low on resistance. It is often used for load switching, power switching and high speed switching applications. The FET can be used in many applications such as HVAC, lighting controls, audio systems, medical systems, industrial systems, automotive systems, and many more. The FET is also ideal for use in combination with large scale integration devices.
In order to understand the working principle of the IRF214TR, it is important to understand how FETs work. FETs are voltage-controlled devices with two aluminum contacts, a drain and a source. A voltage applied on the gate controls the current flow between the source and the drain. The gate voltage is referred to as the Gate Threshold Voltage (VGS). When the gate voltage applied is greater than the threshold voltage, the FET is said to be in its “on” state, and the current between the source and the drain can flow. Conversely, when the gate voltage is less than the threshold voltage, the FET is said to be in its “off” state, and no current flow.
The IRF214TR has a very low on resistance making it ideal for high-speed switching and power control applications. It has a low capacitance which helps reduce signal degradation due to signal reflections. Additionally, it has a low gate charge which reduces switching losses and power supply surge currents. Furthermore, the FET has a high speed dynamic response which prevents unwanted overshoot or undershoot, ensuring signal accuracy and reliability.
The IRF214TR can be used in a variety of applications due to its high performance and reliability. It is commonly used in HVAC, lighting and audio systems, providing reliable and accurate signal switching. It is also used in industrial power control and motor control systems, providing accurate and fast switching, and protection against over-current damage. Furthermore, it is used in automotive systems, providing reliable, high speed switching and power control. Finally, it is used in a variety of medical systems, providing accurate and fast signal control.
In conclusion, the IRF214TR is an ideal choice for many applications due to its high performance and low on resistance. It is commonly used in HVAC, lighting and audio systems, industrial power control and motor control systems, automotive systems and medical systems providing reliable and accurate signal switching. It has a very low on resistance making it ideal for high-speed switching and power control applications, and its low capacitance and gate charge minimize signal degradation and power supply surge currents. Additionally, it has a high speed dynamic response which eliminates unwanted overshoot or undershoot ensuring signal accuracy and reliability.
The specific data is subject to PDF, and the above content is for reference
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IRFL214PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 250V 790MA SO... |
IRFL9014PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 1.8A SOT2... |
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IRFL024NTR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
IRFL1006TR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
IRFL214TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 790MA SO... |
IRFL4315 | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 2.6A SOT... |
IRFL024Z | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 5.1A SOT2... |
IRFL1006PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
IRFL024ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 5.1A SOT2... |
IRFL024NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
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