Allicdata Part #: | IRFL024N-ND |
Manufacturer Part#: |
IRFL024N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 2.8A SOT223 |
More Detail: | N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRFL024N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.3nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF024N is a commonly used Field Effect Transistor (FET) produced by the electronics manufacturer Infineon. It is a type of Insulated Gate bipolar Transistor (IGBT) and is a single-channel device. It\'s typically used in power-electronic circuits, particularly those that require high levels of current or voltage. This article will provide an overview of the applications and working principles of the IRF024N.
Applications
The IRF024N is typically used as a switch or voltage regulator in circuits that involve either high levels of current or voltage. It is especially suitable for circuits with high power consumption, and is commonly used in circuits that require the switching or regualting of high amount of power, such as the power supply for computers and mobile phones. This device can also be used in power-electronic circuits, such as motor controllers and AC/DC converters.
In addition, the IRF024N is commonly used in automotive applications, such as fuel injection systems, transmission control systems, anti-lock braking systems, and engine control units. It is also used in inverters, which are often used to provide backup power to homes, offices, and other buildings.
Working Principle
The IRF024N is a type of FET which works by modulating the amount of electric current which passes through it. This is done by creating an electric field between the Gate of the transistor and the channel, which modifies the conductivity of the channel. This can be used to control the amount of current which flows through the device.
When a voltage is applied to the Gate, an electric field is created and charges up the Gate region. This creates an electrical potential, causing electrons and holes to move into and out of the channel, respectively. This changes the current that can flow through the device and modulates the voltage levels. By varying the voltage applied to the Gate, the user can control the current that flows through the FET. This makes the IRF024N a useful device for controlling high-power circuits.
Conclusion
The IRF024N is a type of FET which is commonly used in power-electronic and automotive applications. It is useful for controlling circuits which require precise and powerful control over the current or voltage, and is especially suitable for circuits with high power consumption. The working principle of the IRF024N is based on modulating the electric field between the Gate and the Channel, which is used to control the current flow in the device. This makes the IRF024N a versatile and powerful transistor for circuit control.
The specific data is subject to PDF, and the above content is for reference
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