IRFL024N Allicdata Electronics
Allicdata Part #:

IRFL024N-ND

Manufacturer Part#:

IRFL024N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 2.8A SOT223
More Detail: N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: IRFL024N datasheetIRFL024N Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF024N is a commonly used Field Effect Transistor (FET) produced by the electronics manufacturer Infineon. It is a type of Insulated Gate bipolar Transistor (IGBT) and is a single-channel device. It\'s typically used in power-electronic circuits, particularly those that require high levels of current or voltage. This article will provide an overview of the applications and working principles of the IRF024N.

Applications

The IRF024N is typically used as a switch or voltage regulator in circuits that involve either high levels of current or voltage. It is especially suitable for circuits with high power consumption, and is commonly used in circuits that require the switching or regualting of high amount of power, such as the power supply for computers and mobile phones. This device can also be used in power-electronic circuits, such as motor controllers and AC/DC converters.

In addition, the IRF024N is commonly used in automotive applications, such as fuel injection systems, transmission control systems, anti-lock braking systems, and engine control units. It is also used in inverters, which are often used to provide backup power to homes, offices, and other buildings.

Working Principle

The IRF024N is a type of FET which works by modulating the amount of electric current which passes through it. This is done by creating an electric field between the Gate of the transistor and the channel, which modifies the conductivity of the channel. This can be used to control the amount of current which flows through the device.

When a voltage is applied to the Gate, an electric field is created and charges up the Gate region. This creates an electrical potential, causing electrons and holes to move into and out of the channel, respectively. This changes the current that can flow through the device and modulates the voltage levels. By varying the voltage applied to the Gate, the user can control the current that flows through the FET. This makes the IRF024N a useful device for controlling high-power circuits.

Conclusion

The IRF024N is a type of FET which is commonly used in power-electronic and automotive applications. It is useful for controlling circuits which require precise and powerful control over the current or voltage, and is especially suitable for circuits with high power consumption. The working principle of the IRF024N is based on modulating the electric field between the Gate and the Channel, which is used to control the current flow in the device. This makes the IRF024N a versatile and powerful transistor for circuit control.

The specific data is subject to PDF, and the above content is for reference

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