
Allicdata Part #: | IRFU014-ND |
Manufacturer Part#: |
IRFU014 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 7.7A I-PAK |
More Detail: | N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Throug... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFU014 is a type of Insulated Gate Bipolar Transistor (IGBT) which is typically used in high- power analog and digital circuits. This type of transistor is a switching transistor that is designed to switch large currents and voltages between two terminals. IRFU014 has many different applications from motor control, lighting, appliances and other applications.
This type of IGBT has an integrated gate drive circuit which makes it suitable for high-volume applications. The IGBT\'s gate drive circuit helps to control the switching times and make it more efficient compared to other types of transistors.
The IRFU014 transistor is a three-terminal device with two insulated terminals, the gate and the emitter. It has a field oxide layer that surrounds a metal oxide semiconductor (MOS) transistor body. The oxide layer protects the transistor from external electrical disturbances, thus providing it with high isolation voltage.
The IRFU014 IGBT has a wide range of applications including high power switches, motor control, lighting and appliance control, automotive high power electronics, switched-mode power supplies, switch mode voltage regulators and many more. The design of this IGBT enables it to provide high switching speeds, high voltage and high current capabilities.
The working principle of the IRFU014 IGBT is based on the principle of an insulated gate field effect transistor (FET) device. It consists of a metal oxide semiconductor (MOS) structure, wherein a p-type doped semiconductor forms the channel between the source and the drain. A gate voltage is applied between the source and drain which create a channel between the two. This voltage determines the current flow through the transistor. The gate voltage has to be in the specific range for the proper functioning of the device.
The IRFU014 IGBT offers several advantages over conventional gate power transistors like improved speed, low resistance and high isolation voltage. This makes it suitable for applications that require high switching speed or high isolation voltages like in motor control, lighting and appliance control, automotive high power electronics, switched-mode power supplies and switch mode voltage regulators. It is also used in home and battery operated devices, audio amplifiers and lasers where the device can be controlled by a computer or some other controller.
In conclusion, the IRFU014 IGBT offers excellent performance in high power analog and digital applications. Its wide range of advantages make it a preferred choice for applications such as motor control, lighting and appliance control, automotive high power electronics, switched-mode power supplies, switch mode voltage regulators and many more. It has a wide range of uses and is easy to use and configure. The IGBT is ideal for applications that require high switching speed or high isolation voltages.
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