IRFU014 Allicdata Electronics
Allicdata Part #:

IRFU014-ND

Manufacturer Part#:

IRFU014

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 7.7A I-PAK
More Detail: N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Throug...
DataSheet: IRFU014 datasheetIRFU014 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFU014 is a type of Insulated Gate Bipolar Transistor (IGBT) which is typically used in high- power analog and digital circuits. This type of transistor is a switching transistor that is designed to switch large currents and voltages between two terminals. IRFU014 has many different applications from motor control, lighting, appliances and other applications.

This type of IGBT has an integrated gate drive circuit which makes it suitable for high-volume applications. The IGBT\'s gate drive circuit helps to control the switching times and make it more efficient compared to other types of transistors.

The IRFU014 transistor is a three-terminal device with two insulated terminals, the gate and the emitter. It has a field oxide layer that surrounds a metal oxide semiconductor (MOS) transistor body. The oxide layer protects the transistor from external electrical disturbances, thus providing it with high isolation voltage.

The IRFU014 IGBT has a wide range of applications including high power switches, motor control, lighting and appliance control, automotive high power electronics, switched-mode power supplies, switch mode voltage regulators and many more. The design of this IGBT enables it to provide high switching speeds, high voltage and high current capabilities.

The working principle of the IRFU014 IGBT is based on the principle of an insulated gate field effect transistor (FET) device. It consists of a metal oxide semiconductor (MOS) structure, wherein a p-type doped semiconductor forms the channel between the source and the drain. A gate voltage is applied between the source and drain which create a channel between the two. This voltage determines the current flow through the transistor. The gate voltage has to be in the specific range for the proper functioning of the device.

The IRFU014 IGBT offers several advantages over conventional gate power transistors like improved speed, low resistance and high isolation voltage. This makes it suitable for applications that require high switching speed or high isolation voltages like in motor control, lighting and appliance control, automotive high power electronics, switched-mode power supplies and switch mode voltage regulators. It is also used in home and battery operated devices, audio amplifiers and lasers where the device can be controlled by a computer or some other controller.

In conclusion, the IRFU014 IGBT offers excellent performance in high power analog and digital applications. Its wide range of advantages make it a preferred choice for applications such as motor control, lighting and appliance control, automotive high power electronics, switched-mode power supplies, switch mode voltage regulators and many more. It has a wide range of uses and is easy to use and configure. The IGBT is ideal for applications that require high switching speed or high isolation voltages.

The specific data is subject to PDF, and the above content is for reference

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