IRFUC20PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFUC20PBF is a self-protected high-side device, integrating a low RDS(ON) MOSFET and a polarity protected logic-level gate driver. The device offers better switching performance and low Figure of Merit (FOM= Ron x Qg) than an equivalent sized discrete MOSFET. Its unique features and packaging solutions allow it to comply with high-side switch standards, making it a suitable device for automotive high-side switching applications.

The IRFUC20PBF is configured as an N-channel MOSFET, and its main purpose is to control the current through a circuit by using the gate-source voltage. It uses source-to-drain current, or "drain current", as the main parameter for determining the voltage necessary for conducting current through the channel. When a voltage source is applied to the gate, the MOSFET will open, allowing current to flow through the drain and source terminals. The device offers a variety of benefits, including fast switching performance, wide gate-to-source voltage range, and efficient thermal performance.

When using the IRFUC20PBF, the current needs to be limited by the rated maximum current of the device and the load\'s own characteristics. The gate-to-source voltage will also need to be within the specified range, as this determines how the stored charge affects the device\'s switching characteristics. The device features a protected logic-level gate driver, allowing it to switch more rapidly, as well as working with a wide variety of input signal voltages. Its unique features also make it beneficial for use in automotive high-side switching applications.

The IRFUC20PBF is also a uniquely packageable device, allowing for an optimized stack-up design. This enables high-side switch standards to be met, and provides a solution for space-constrained designs, such as automotive computer-on-module and gateway applications. Its small footprint and low profile also make it suitable for use in space-constrained, high-density applications.

In conclusion, the IRFUC20PBF is an ideal device for high-side switch applications, offering an optimized stack-up design, and a high Figure of Merit (FOM= Ron x Qg). Its wide gate-to-source voltage range, protected logic-level gate driver, and low profile make it suitable for a variety of space-constrained applications in the automotive industry. It can be used to control and limit current in a circuit quickly, efficiently, and reliably.

The specific data is subject to PDF, and the above content is for reference