IRFU3704PBF Allicdata Electronics
Allicdata Part #:

IRFU3704PBF-ND

Manufacturer Part#:

IRFU3704PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 75A I-PAK
More Detail: N-Channel 20V 75A (Tc) 90W (Tc) Through Hole IPAK ...
DataSheet: IRFU3704PBF datasheetIRFU3704PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFU3704PBF is a single N-channel enhancement mode power field effect transistor (FET) which features very low on-state resistance. This device is suitable for low-side switch applications and other applications such as protection, DC-DC converters, switched-mode power supplies (SMPS), and general purpose switching applications. This device comes in a TO-263 SMD package.

This transistor is an enhancement mode unit. It operates in a very unique manner and the difference between conventional transistors and this device is just astounding. It operates by applying a positive gate bias voltage to the drain and applying a positive drain bias voltage to the gate. This effectively creates a depletion region within the channel. When the gate bias is maintained at the correct voltage level, it allows for electrons to move from source to drain. This device is low-side switch type that is designed for applications where a separate supply voltage is desired that is isolated from the main system ground. The device does not have any internal diodes or protection circuits so it is important to take care when selecting this device for use in circuits, particularly when the main system ground is different than the supply voltage.

The IRFU3704PBF uses vertical DMOS technology to provide high-power handling capabilities, low on-resistance, and excellent performance over a wide temperature range. It is a very efficient device that can handle applications ranging up to 4A peak, 1A steady state current. On-state resistance is very low when compared to other small-signal FETs and can be as low as 1.3mOhms. This device is commonly used in switching regulator, DC-DC converter, and PWM and inverter applications.

The IRFU3704PBF is a very versatile device that can be used for a variety of applications. It can be used in low-side switch applications as a switch, where the gate voltage is used to turn the switch on and off. It can also be used as a current-limiting device, where the gate voltage is adjusted to limit the amount of current passing through the device. This device can also be used as a load switch, where the transistor is used to switch in or out a load or component.

The IRFU3704PBF is an ideal device for use in a variety of low-side switch applications, DC-DC converter applications, and pulsed applications. Its low on-resistance combined with its high power-handling capabilities make it an ideal choice for a device in applications that require precise current control. Its vertical DMOS technology enables it to provide high performance over a wide temperature range, ensuring reliable operation in even the harshest of environments.

The specific data is subject to PDF, and the above content is for reference

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