IRFU120Z Allicdata Electronics
Allicdata Part #:

IRFU120Z-ND

Manufacturer Part#:

IRFU120Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 8.7A I-PAK
More Detail: N-Channel 100V 8.7A (Tc) 35W (Tc) Through Hole IPA...
DataSheet: IRFU120Z datasheetIRFU120Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFU120Z is a single transistor in the field-effect transistor (FET) family. It is also referred to as a MOSFET (metal-oxide-semiconductor field-effect transistor). The IRFU120Z is a n-channel enhancement type MOSFET that boasts low on-resistance and low gate charge making it suitable for high-current applications ranging from switching to linear mode operation. It is available in a TO-220 package, with a maximum drain source voltage of 100 volts and drain current of 24 amps.

The working principle behind the IRFU120Z is quite simple. The field-effect transistor is essentially a three-terminal device with source, gate, and drain terminals. When an external voltage source is applied to the gate terminal, the FET behaves like a resistor. That is, the current between the source and the drain is modulated (controlled) by the voltage applied to the gate terminal. By applying a positive voltage to the gate terminal, the FET will increase the resistance between the source and the drain terminals (also known as the off-state), and by applying a negative voltage to the gate terminal, the FET will decrease the resistance between the source and the drain (also known as the on-state).

In terms of application fields, the IRFU120Z offers a range of possibilities. It is often used in a number of automation, power conversion, and power management industries. For example, it can be used in the switching of electric motors, robotics and automation devices, variable speed drives, power converters, and other power devices.

The IRFU120Z can also be used in industrial systems, especially when power efficiency is needed. It is well suited to applications where switching speeds and current levels are important, such as in motor controllers, inverters, motor drives, and static control systems. It is also a great choice for high-reliability designs such as data communication systems, industrial process control systems, and computer control systems.

The IRFU120Z MOSFET is an incredibly versatile device and its flexibility makes it suitable for a vast range of power management applications. Its impressive low on-resistance and low gate charge allow for a large voltage and current range, which makes it suitable for a variety of high-current applications. Its relative ease of use and competitive price also make it a great choice for hobbyists and professionals alike.

The specific data is subject to PDF, and the above content is for reference

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