IRFU3911PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFU3911PBF is a n-channel enhancement mode power field-effect transistor (FET). It is designed to operate at high frequencies and current levels. This type of transistor is used primarily in power management and high-frequency applications, where it is necessary to provide a high voltage, low noise, and high current capability.

Applications

The IRFU3911PBF is used in a wide range of applications in the electronics industry, such as DC-DC converters, switched-mode power supplies (SMPSs), inverters, and motor control. Due to its high-speed switching capability, it is also used in RF and microwave applications, such as amplifiers, mixers, switches, and oscillators. In addition, it is often used in motor control and automotive applications.

Features

The IRFU3911PBF has several features that make it a popular choice for high-frequency application. These include low on-resistance to minimize power loss, a maximum drain-source voltage of 250V, a maximum drain current of 110A, and a maximum gate voltage of 20V. The device also has a gate-drain impedance of 15V, a gate-source impedance of 1.2V, and a gate-drain capacitance of 4.2pF. Furthermore, the device is RoHS compliant and has a maximum junction temperature of 175C.

Working Principle

The IRFU3911PBF is an n-channel enhancement mode power FET. This means that it is “normally off”. In other words, it does not normally conduct current until a voltage is applied to the gate terminal. This voltage “enhances” the current flow from the source to the drain. The input and output of the FET are completely isolated from one another. This allows the device to be used in situations where the two should not be in contact with one another. When the transistor is turned on, the input and output are connected, allowing current to flow. Conversely, when the transistor is turned off, the input and output are disconnected and no current can flow.

The transistors can be used in either enhancement or depletion mode. When in enhancement mode, the transistor is normally off, and when in depletion mode it is normally on. In either mode, when the gate voltage is increased, the current through the FET decreases, while when it is decreased, the current increases. This allows the transistor to be used as a switch, controlling the current flow through the device.

Conclusion

The IRFU3911PBF is an n-channel enhancement mode FET that is used in a variety of applications. It is highly popular due to its low on-resistance, high voltage and current capability, and high-frequency switching performance. The device is primarily used in power management and high-frequency applications, but can also be used in RF and microwave applications, motor control, and automotive applications. Its gate-source impedance, gate-drain capacitance, and maximum junction temperature make it a suitable choice for these applications. With its wide range of features, the IRFU3911PBF is a great choice for many different types of applications.

The specific data is subject to PDF, and the above content is for reference