IRFU4104PBF

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The IRFU4104PBF is a type of insulated-gate field-effect transistor (IGFET) also commonly referred to as a metal-oxide-semiconductor field-effect transistor. In other words, the IRFU4104PBF is part of a family of field effect transistors (FETs) known as MOSFETs or metal-oxide-semiconductor FETs. The IRFU4104PBF is a single P-channel enhancement mode FET.

FETs are solid state devices used to amplify, switch, or otherwise control electrical signals. The IRFU4104PBF, as with every FET, has an insulated gate that acts as a control over the flow of current from the source through to the drain of the FET. This flow is controlled by the number of free electrons available in the region located between the source and drain, known as the channel. It is through this electron control that FETs can be used to control the flow of current.

The IRFU4104PBF is built with a plastic encapsulated dual P-channel enhancement mode FETs housed in a standard four-lead SOT-23 plastic surface-mount package, making them suitable for high-density surface mount design. It has a maximum voltage rating of 30 Volts, a maximum drain current of 39 microamps and a P-channel specification of -1.8 volts. This range allows the IRFU4104PBF to be used for a variety of applications, such as load switches, small audio amplifiers, motor control circuits, voltage regulators, and motor controls.

The IRFU4104PBF works via the transfer of electrons from the source to the drain when a positive voltage is applied to the gate of the FET. This voltage then creates a positive potential on the gate that affects the conductivity of the channel, allowing electrons to be transferred from the source to the drain. This process is known as channel enhancement, as the electrons flowing through the channel are enhanced in number when the voltage at the gate is increased. By decreasing the voltage at the gate, the flow of electrons can be decreased, acting as an amplifier or switch.

Due to its simple structure and low input current requirements, the IRFU4104PBF can be used as a low power switch or amplifier in a variety of applications. Its low voltage and current requirements also make it suitable for use in battery operated applications. Its superior switching characteristics also make it ideal for use in motor control circuits and switching regulators, as well as a variety of audio and data circuit applications where low power consumption and low noise is a requirement.

In summary, the IRFU4104PBF is part of a family of field-effect transistors known as MOSFETs. It has a maximum voltage of 30 volts and a maximum drain current of 39 microamps. This makes it ideal for use in a variety of applications, such as load switches, small audio amplifiers, motor control circuits, voltage regulators, and motor controls. By using the voltage applied to its gate to control the flow of electrons between the source and drain, the IRFU4104PBF can act as an amplifier or switch, making it ideal for low power and low noise applications.

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