IRFU4105 Allicdata Electronics
Allicdata Part #:

IRFU4105-ND

Manufacturer Part#:

IRFU4105

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 27A I-PAK
More Detail: N-Channel 55V 27A (Tc) 68W (Tc) Through Hole IPAK ...
DataSheet: IRFU4105 datasheetIRFU4105 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFU4105 is a metal-oxide semiconductor field-effect transistor (MOSFET) specifically designed for pulse-mode switching applications. This type of transistor is capable of large current and power loads, making it ideal for many power management applications. With its superior voltage rating and low on-state resistance, the IRFU4105 is especially well-suited for high-frequency switching and motor drive applications.

A MOSFET is a type of transistor that shares certain characteristics with other types of field-effect transistors – including the fact that it is made up of three active layers or regions. The source and drain regions are separated by the active channel, and this active gate region controls the flow of electrons between the source and the drain. When a gate voltage is applied between the source and drain, it turns the transistor “on” and electrons flow through the channel. When the gate voltage is removed, the transistor turns “off”, and electrons are no longer able to flow through the channel.

The IRFU4105 uses a single-channel MOSFET structure, meaning that it only utilizes one region for electron flow. This enables the transistor to switch more quickly and reliably, making it ideal for high-speed pulse-mode switching applications. In addition, the IRFU4105 features a low on-state resistance, which allows it to handle current and power loads more efficiently. The transistor also has a high voltage capability, making it suitable for use in high voltage environments.

Because of its superior characteristics, the IRFU4105 is well-suited for a variety of power management applications. Its low on-state resistance and high voltage capability make it ideal for DC-DC converters, motor control applications, and power supply units. In addition, it can be used in LED light dimming applications, high-frequency switching applications, and automotive applications. It is also widely used in aerospace and military applications, where its superior voltage rating and low on-state resistance make it particularly suitable.

All in all, the IRFU4105 is an ideal choice for a wide variety of pulse-mode switching applications. Its single-channel structure and low on-state resistance make it ideal for high-frequency switching, while its high voltage capability makes it suitable for use in high voltage environments. As such, the IRFU4105 is well-suited for a range of power management applications, from LED dimming to motor control units and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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