IRFU1010Z Allicdata Electronics
Allicdata Part #:

IRFU1010Z-ND

Manufacturer Part#:

IRFU1010Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 42A I-PAK
More Detail: N-Channel 55V 42A (Tc) 140W (Tc) Through Hole IPAK...
DataSheet: IRFU1010Z datasheetIRFU1010Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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An IRFU1010Z is a power field effect transistor of a smaller size that is used in various applications and systems. This type of transistor is used in high power applications and is often used in computing equipment and other electronic applications. The IRFU1010Z is also used in audio and video components as well as in many military applications. It is a three-terminal device with an operating voltage of up to 18 V, a gate protection voltage of up to 18 V, and a power dissipation of up to 2 W. It is a source-to-drain field effect transistor that is used in applications that require a high current capability with minimal power dissipation.

The IRFU1010Z uses a planar field effect transistor technology to achieve the desired performance characteristics. The three terminals of the device include a gate, drain, and source. The gate of the IRFU1010Z is the input, where an electrical signal is applied to control the transistor’s operation. The drain of the device is the output, where the current driven by the transistor is produced. The source is the return path for the current. When the gate of the IRFU1010Z is electrically biased, the electrons will flow from the source terminal to the drain terminal, generating an electrical current.

The working principle of the IRFU1010Z is a simple one. The device is made up of three parts: the gate, the source, and the drain. The gate is the control element, where an electrical signal is applied to control the operation of the transistor. When the gate is biased, the source and drain both become activated, enabling current to flow through the drain. The amount of current flowing through the drain will be determined by the amount of voltage applied to the gate. By adjusting the voltage on the gate, the characteristics of the transistor can be modified to achieve the desired effect.

The IRFU1010Z can be used in a wide range of applications, from digital circuit designs to power conversion systems, and from automotive electronics to motor control. Its capabilities and design make it a popular choice for many applications requiring high-current reliability and performance. Additionally, it is designed to be highly effective in applications where noise or high-frequency operation is required.

The IRFU1010Z is an important device for many different types of applications. Its versatility and performance make it ideal for many uses. Additionally, its small size and low power dissipation make it ideal for applications where space and power savings are of utmost importance. It is a reliable device with built-in protection that makes it an excellent choice for any application.

The specific data is subject to PDF, and the above content is for reference

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