Allicdata Part #: | IRFU224PBF-ND |
Manufacturer Part#: |
IRFU224PBF |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 3.8A I-PAK |
More Detail: | N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Throu... |
DataSheet: | IRFU224PBF Datasheet/PDF |
Quantity: | 211 |
1 +: | $ 1.14030 |
10 +: | $ 1.01052 |
100 +: | $ 0.79878 |
500 +: | $ 0.61945 |
1000 +: | $ 0.48904 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRFU224PBF is a single field-effect transistor (FET) with an integrated drain-source resistance of 175 mΩ. The device can handle up to 35 V, has a 200 mA continuous drain current rating and supports 1.2 A pulsed drain current. It also has an on-resistance of 0.12 Ω and rDS(on) at 25° C, 1 Vgs of 0.077 Ω. Its low gate threshold voltage makes it suitable for a wide range of applications.
IRFU224PBF has a wide range of applications in portable electronics, home appliances, power and automotive applications, as well as for general purpose switching. It is especially useful in environments where low power dissipation and energy savings are important, such as in battery-powered applications. It is also suitable for higher frequency switching applications, such as power converters, power mosfets, high-speed switching, and switching of automotive control systems.
The IRFU224PBF works on the principle of MOSFET (metal-oxide-semiconductor field effect transistor) technology, which is more efficient than PNP and NPN transistors. It is capable of switching higher currents and can handle higher voltages. It is also more efficient than bipolar transistors, resulting in lower power dissipation. The low gate threshold voltage of this device allows it to switch on and off quickly and accurately, and with low power dissipation.
The IRFU224PBF can also be used in various applications such as amplifier circuits, power supply regulators, relay drivers and light dimmers. It is also suitable for pulse applications, where it can be used in conjunction with low-power CMOS circuits. Its excellent input and output characteristics make it a suitable choice for switching in high frequency and low noise operations.
The IRFU224PBF is also capable of high-speed operation, and its integrated protection circuits provide excellent protection against current overload, short circuit faults and electrostatic discharge. It also has a built-in thermal shutdown protection to prevent over-temperature condition, which can cause device damage.
In summary, the IRFU224PBF is a versatile single FET with a wide range of applications in portable electronics, home appliances, power and automotive applications. Its low gate threshold voltage makes it suitable for a wide range of applications, and its excellent input and output characteristics make it suitable for high frequency and low noise operations. In addition, its integrated protection circuits provide excellent protection against current overloads, short circuit faults and electrostatic discharge. The device is also suitable for pulse applications in conjunction with low-power CMOS circuits.
The specific data is subject to PDF, and the above content is for reference
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