Allicdata Part #: | IRFU3303-ND |
Manufacturer Part#: |
IRFU3303 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 33A I-PAK |
More Detail: | N-Channel 30V 33A (Tc) 57W (Tc) Through Hole IPAK ... |
DataSheet: | IRFU3303 Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 57W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The International Rectifier Corporation\'s IRFU3303 is a specifically designed MOSFET that operates in the 60 Volt range. This product can be used as a power switch and thus is commonly used in pulse-width modulated applications, such as motor control, switched mode power supplies, and lighting control. It is a high-speed and low-resistance design, manufactured with a lithographic process suited for high-density surface mounting applications.
The IRFU3303 operates on P-Channel MOSFET technology. The P-Channel MOSFET is basically a kind of transistor that works by controlling electrical current with a capacitance. It consists of three layers: a source layer, a gate layer, and a drain layer. When a voltage is applied to the gate layer, an electric field is produced that attracts electrons to the source layer and repels them from the drain layer, thus creating a conductive channel for current to flow. The width of this channel can be adjusted by changing the voltage on the gate layer, allowing the user to control precisely how much current is allowed to flow.
The IRFU3303 is a single-shunt configuration, meaning that a single voltage is applied to the gate, so that a single voltage controls the current through the device. This configuration offers improved power efficiency and faster switching speeds, making it suitable for high-speed applications. It has a typical on-resistance of 23 mOhms and a drain-source voltage rating of 45-60 V. It is rated for a maximum of 5.2 A and 18.2 W output power.
The IRFU3303 is also equipped with built-in temperature compensation and current limiting protection, allowing it to operate reliably in extreme environmental conditions. The device also includes advanced gate drive circuitry with gate charge monitoring, so that the switching speed can be accurately controlled.
The IRFU3303 is an ideal solution for numerous applications. Its high-speed switching and adjustable resistance make it suitable for motor control and power supply applications. Its temperature compensation and current limiting protection make it suitable for industrial applications in extreme environmental conditions. Finally, its gate drive circuitry with gate charge monitoring ensures smooth transitions and accurate switching times.
The IRFU3303 is a reliable, high-performance MOSFET designed for use in a wide range of applications. Its high-speed switching and adjustable resistance make it an ideal choice for motor control and power supply applications. Its temperature compensation and current limiting protection make it suitable for use in extreme environmental conditions, while its gate drive circuitry with gate charge monitoring allows for accurate switching times. With its wide range of features and capabilities, the IRFU3303 is sure to be a popular choice among design engineers.
The specific data is subject to PDF, and the above content is for reference
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