IRFU1010ZPBF

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The IRFU1010ZPBF is an N-channel metal oxide semiconductor field effect transistor (MOSFET). This power transistor from International Rectifier (IR) utilizes advanced process technology to achieve outstanding performance in an ultra-small package. MOSFETs are used in a wide range of applications including power supplies, switching circuits, and motors.

The IRFU1010ZPBF is designed for low power applications. It has a breakdown voltage of 20 volts and a maximum drain current of 14 A. It has an ultra-low drain-source on-resistance of 17 mT. The maximum power dissipation is 640 mW. The transistor features a P-channel MOSFET construction with a gate-source voltage range of -20 to 20 V, drain-source voltage range of -20 to 20 V, gate-body voltage range of -20 to +20 V, and drain-body voltage range of -20 to 20 V.

The working principle of the IRFU1010ZPBF is relatively simple. It works by providing a path for the flow of current through a channel between the source and the drain. The channel is controlled by the gate voltage, which can be adjusted to control the amount of current flowing through it. The amount of current flowing through the channel is determined by the resistance of the channel, which is determined by the voltage on the gate. By adjusting the gate voltage, the current flow can be regulated, allowing the transistor to activate or deactivate electrical components.

The IRFU1010ZPBF is suitable for a wide range of applications, such as power supplies, motor control circuits, and switching circuits. It can be used in high-performance switching applications, such as digital switching and audio switching, as well as slow-switching applications, such as analog switching. It is also suitable for low-power switching applications, such as load switching and on/off control. In addition, it can also be used for sensing and monitoring applications, such as current and voltage monitoring.

In summary, the IRFU1010ZPBF is an N-channel MOSFET designed for low power applications. It has a breakdown voltage of 20 V and a maximum drain current of 14 A. It has an ultra-low drain-source on-resistance of 17 mT. The working principle of the IRFU1010ZPBF is simple and utilizes a channel between the source and the drain to control the flow of current. This power transistor is suitable for a wide range of applications, such as power supplies, motor control circuits, and switching circuits.

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