Allicdata Part #: | IRFU220PBF-ND |
Manufacturer Part#: |
IRFU220PBF |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 4.8A I-PAK |
More Detail: | N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Throu... |
DataSheet: | IRFU220PBF Datasheet/PDF |
Quantity: | 889 |
1 +: | $ 1.11510 |
10 +: | $ 0.98595 |
100 +: | $ 0.77906 |
500 +: | $ 0.60417 |
1000 +: | $ 0.47697 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFU220PBF is a single-channel FET (Field Effect Transistor) manufactured by Infineon technologies. It is an enhanced version of their widely successful IRFU180PBF, and is designed for use in applications such as power control, high current switching and amplifier circuits.
The IRFU220PBF is an N-channel depletion mode FET. It is a metal-oxide-semiconductor FET (MOSFET), meaning that it contains a metal gate and an oxide semiconductor. The device works by utilizing the voltage applied to its Drain-Source terminal to control the amount of current flowing through the FET. It has a very low on-state resistance, meaning it can handle high currents at relatively low voltages. It also has a large incremental gain and low gate-source capacitance, making it ideal for power control and high current switching.
The IRFU220PBF has a several notable features. It has a maximum gate-to-source voltage of 300V and a maximum drain-source voltage of 1000V. It also has a very low typical tread-off voltage, making it capable of being used with low gate drive circuits. The device also has excellent avalanche characteristics, allowing it to safely withstand high voltage pulses, making it ideal for applications such as protection circuits. It also has a fairly low thermal impedance, making it less prone to overheating when used in high-power applications.
The IRFU220PBF has a wide variety of applications. It is a popular choice for motor control, switching and amplifier circuits due to its low on-state resistance and excellent high-energy pulse performance. It is also suitable for use in power management and switching applications, due to its low gate drive requirements and high current handling capabilities. The device is also commonly used in protection and emergency stop circuits, due to its safe and reliable operation in extreme voltage environments.
In summary, the IRFU220PBF is a single-channel FET manufactured by Infineon technologies. It is an N-channel depletion mode FET, and it has a maximum gate-to-source voltage of 300V and a maximum drain-source voltage of 1000V. It is capable of handling high currents at reasonably low voltages, and is a good choice for motor control, high current switching, power management and protection circuits. The device has excellent thermal and avalanche characteristics, making it suitable for use in high-power and high-voltage applications. With its excellent performance characteristics, the IRFU220PBF is a popular choice for various types of circuit applications.
The specific data is subject to PDF, and the above content is for reference
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