IRFU3607TRL701P Allicdata Electronics
Allicdata Part #:

IRFU3607TRL701PTR-ND

Manufacturer Part#:

IRFU3607TRL701P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 75V 56A IPAK
More Detail: N-Channel 75V 56A (Tc) 140W (Tc) Through Hole IPAK...
DataSheet: IRFU3607TRL701P datasheetIRFU3607TRL701P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
FET Feature: --
Power Dissipation (Max): 140W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The IRFU3607TRL701P is a single N-channel Enhancement Mode Field Effect Transistor (FET) manufactured by International Rectifier (IR). This device is a low-energy consumption analog MOSFET, designed for a variety of applications including line and battery-powered circuits and industrial and domestics use.

The IRFU3607TRL701P is an enhancement mode FET, meaning that the conducting path is turned on by an appropriate gate voltage. This allows for near zero gate current and low power consumption. This device has a Drain-Source Breakdown Voltage of 100V and a continuous drain current of 4A, at a drain-source voltage of 80V. It has a maximum Power Dissipation of 2.0W and a maximum Operating Frequency of 1MHz.

The IRFU3607TRL701P is commonly used in small signal circuits, voltage regulation, switch mode power supply circuits and gate drivers. The N-channel enhancement mode FET has a high input impedance, low on-resistance, low gate threshold and a fast switching speed, making it a perfect choice for voltage control, signal switching and current amplification applications. The device also features a low input capacitance and low drain-source on-state resistance. This allows for a low noise, high speed performance at low frequencies. Additionally, this device is capable of ESD (Electrostatic Discharge) protection up to 12 KV, allowing for a high-level of Protection for high-speed signals.

The IRFU3607TRL701P can also be used in automotive circuits where space is a concern. Its low profile and high power handling capability makes it an ideal choice in such applications. The high efficiency and low power consumption are further beneficial attributes, as it reduces heat and increases overall device performance. It is also used in medical and industrial equipment that require higher power handling capabilities and a low input threshold.

In operation, the IRFU3607TRL701P is electronically switched on when a positive voltage is applied to the gate. This causes the drain current to flow from the drain terminal to the source terminal. The IRFU3607TRL701P can be used to switch high-current loads, with adjustable on-resistance and voltage, so long as the gate voltage is higher than that of the drain-source voltage. The drain-source off state is ensured by applying a negative voltage to the gate terminal.

Overall, the IRFU3607TRL701P is an ideal choice for a wide range of applications. Its easy to use and durable, making it an ideal choice for a variety of scenarios. With its high power handling capability, low on-resistance and fast switching speed, it can be confidently used in small power-saving circuits, voltage regulation and motor driver applications.

The specific data is subject to PDF, and the above content is for reference

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