IRFU3706-701PBF Allicdata Electronics
Allicdata Part #:

IRFU3706-701PBF-ND

Manufacturer Part#:

IRFU3706-701PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 75A IPAK
More Detail: N-Channel 20V 75A (Tc) 88W (Tc) Surface Mount I-PA...
DataSheet: IRFU3706-701PBF datasheetIRFU3706-701PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: I-PAK (LF701)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFU3706-701PBF is a model of power MOSFET that is particularly suitable for use in various applications. It is both highly efficient and provides low total power losses. Generally, MOSFETs are power switching devices that are used in a variety of electronic circuits. They are essential components in the design of switch-mode power supplies and motor drive circuits, where they display outstanding performance.

This board has an N-channel enhancement type MOSFET mounted on it. It has an off-state drain-source voltage rating of approximately 700 volts, a drain-source on-state resistance of 0.0038 ohms, and a continuous drain current of 13 A. It is also able to handle up to 100W of power.

One of the major advantages of this particular product is that due to its high efficiency it requires minimal heat dissipation during use. As such, it is a great option for use in applications where reduced power consumption is highly desired. In addition, by offering both high reliability and superior performance, these MOSFETs are perfect for applications that require a stable and consistent power supply.

IRFU3706-701PBF is especially suitable for use in motor drives, lighting circuits, power regulators, variable frequency drives, inverters and switched mode power supplies. It is also commonly used in the design of instrumentation, medical equipment, communication systems, and industrial automation. When used correctly, these MOSFETs can greatly reduce the size, complexity and cost of many high-power applications.

The working principle of this model of MOSFET is relatively simple. An electrical signal is applied to the gate terminal and this in turn controls the electrical connection between the source and drain terminals. When no voltage is applied to the gate terminal, the junctions between the source and drain are blocked, resulting in an open circuit state. Conversely, when a voltage is applied, a conducting path is created between the source and drain, thereby allowing current to flow.

Due to its enhanced features, IRFU3706-701PBF is a great choice for those who are looking for a power MOSFET that offers superior performance. Its impressive specifications make it suitable for a wide range of applications and its high efficiency ensures power savings with minimal heat generation. With a view to reducing size and complexity, this device is able to provide enhanced reliability and performance in many high-power applications.

The specific data is subject to PDF, and the above content is for reference

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