IRFU4104-701PBF

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IRFU4104-701PBF is a single N-channel HEXFET® power MOSFET from the IRF family of transistors, specifically designed to operate from 20 V to 100 V. This MOSFET provides a strong performance combination across a wide range of applications such as switching operations at high frequency and low switching losses, due to its fast turn-on and turn-off capabilities, relatively low input capacitance as well as low Rds(on). It is suitable for switching applications up to 10 MHz (e.g. DC/DC converters, motor control and lighting dimmers) and can also be used in output stages of switching power supplies.

The IRFU4104-701PBF is a N-channel enhancement type MOSFET that utilizes HEXFET technology. It has a standard N-channel configuration, with the channel between the source and the drain, and the gate connected to the substrate. When no voltage is applied to the gate, the channel between the source and the drain is in the off state (normally-off state), due to the depletion of the channel by the negative gate bias.

When a positive voltage is applied to the gate, it attracts electrons from the source into the gate oxide, creating a conductive path between source and drain. This conductive path, known as the inversion layer, enables the flow of current through the channel between the source and drain. The higher the voltage on the gate, the thicker the inversion layer and the better the on-state performance of the MOSFET. The threshold voltage (Vth) of the IRFU4104-701PBF is 2.0 V.

The Rds(on) of the IRFU4104-701PBF is relatively low (3.3 mΩ), even at high temperatures, allowing for faster switching and lower switching losses. This makes the MOSFET ideal for applications where fast switching speeds are required. It also provides lower input capacitance, allowing for higher frequency switching. This makes it a good choice for applications such as DC/DC converters and motor control.

The drain-source breakdown voltage (BVdss) of the IRFU4104-701PBF is rated at 100 V and the total gate charge (Qg) is a relatively low 4.9 nC. It is available in a thermally-efficient TO-220AB through-hole package which can dissipate up to 1.2 W of power at 25°C. The max junction temperature is also rated at 150°C.

In conclusion, the IRFU4104-701PBF is a versatile single N-channel HEXFET power MOSFET that offers superior performance in terms of on-state resistance, fast switching speeds, and relatively low input capacitance. It is suitable for many applications, such as DC/DC converters and motor controls, as it can handle up to 100 V and frequencies up to 10 MHz. The thermally efficient package makes it suitable for higherpower applications, where a portion of the heat must be dissipated externally.

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