IRLU014PBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251AA
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	8.4nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	200 mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On):	4V, 5V
Current - Continuous Drain (Id) @ 25°C:	7.7A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRLU014PBF Application Field and Working Principle

The IRLU014PBF is a product manufactured by International Rectifier (IR). It is a N-channel enhancement mode insulated gate field-effect (IGFET) transistor. It belongs to the class of SOT-223 single-sided technology. This device has been optimized to provide digital level control in medium to high current applications.The IRLU014PBF has a wide variety of applications ranging from switching, to rectification, and digital power control. It is popular in automotive electronics, consumer electronics, industrial electronics and power management applications, including LED lighting and home appliances. It is an efficient power switch that can handle large currents and high frequencies and is also suitable for use in high-side switching applications with a low on-resistance.The basic working principle of the IRLU014PBF is simple. It consists of a P-type source and N-type drain, which are separated by a D16G dielectric layer. When a gate voltage is applied to the gate, the oxide layer around the PN junction is subjected to an electric field, and this electric field modulates the drain-to-source current. The greater the gate voltage, the lower the resistance of the junction, resulting in increased current conduction through the channel.The IRLU014PBF can operate at different voltage levels, from 5 to 20 volts. It also has a low gate threshold voltage, which means that it can be used in high-side switching applications. The on-resistance of the device is also very low, allowing it to handle very high switching frequencies.The device also has an integrated body-diode protection feature, which prevents power surges from damaging the device. This feature allows the device to be used in high-side switching applications without the need for additional protection circuits.The IRLU014PBF is a high-performance device which combines the benefits of low on-resistance and excellent body-diode protection. It is suitable for a wide range of switching, rectification, and digital power control applications. It is a reliable and efficient device which is widely used in automotive, consumer, industrial, and power management applications.

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