Allicdata Part #: | IXFH12N100Q-ND |
Manufacturer Part#: |
IXFH12N100Q |
Price: | $ 9.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 12A TO-247AD |
More Detail: | N-Channel 1000V 12A (Tc) 300W (Tc) Through Hole TO... |
DataSheet: | IXFH12N100Q Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 9.00697 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFH12N100Q is a high-performance, high-frequency insulated gate field-effect transistor (IGFET) that can be used in many high-power applications requiring quick circuit shut-off. Additionally, this device can handle up to 100 volts of gate voltage, making it the ideal choice for devices that require a high input voltage. This makes the IXFH12N100Q the ideal choice for applications such as high-side switches, motor drives, high-side level shifters and smart power applications.
The IXFH12N100Q is an n-type IGFET and comes in a single-in-line package. It is composed of a substrate, an ultra-thin layer of metal oxide and an insulated gate. The thickness of the metal oxide layer, which is known as the gate oxide, affects the device’s breakdown voltage, which is the voltage required to break down the metal oxide layer and turn on the transistor. The IXFH12N100Q has a breakdown voltage of 100 volts.
The IXFH12N100Q works by the control of the electric field between the source and the drain. When the voltage applied to the gate is zero, the source and drain are separated by the metal oxide layer and no current flows between them. As the voltage applied to the gate increases, the electric field causes electrons to be pulled out of the metal oxide layer, allowing a current to flow between the source and the drain.
The IXFH12N100Q features an insulated gate, which allows it to operate in high-voltage and high-current applications. By using an insulated gate, the device allows for high-speed switching and fast operation. This makes the IXFH12N100Q an ideal choice for applications such as power switching, motor control, and high-side level shifter. It also offers industry-leading power density and robustness.
The IXFH12N100Q is designed for use in high-frequency applications. This makes it ideal for a wide range of applications, from low-power level shifters to high-power motor drives. It also works well in a variety of other applications such as switching power supplies, converters, amplifiers and linear regulators.
The IXFH12N100Q is designed for use in applications that require both high-efficiency and high-frequency. The device’s insulated gate design allows it to switch on and off quickly and efficiently, making it the ideal device for high-frequency switching applications. This also helps to reduce power losses in the system and to keep the overall power consumption to a minimum.
The IXFH12N100Q is a versatile device that can be used in a wide range of applications. Its rugged design makes it suitable for use in both commercial and industrial applications. It is also relatively easy to use, making it ideal for use in hobbyist and DIY applications. The IXFH12N100Q is an ideal choice for applications that require fast operation and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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IXFH6N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 6A TO-24... |
IXFH10N90 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 10A TO-2... |
IXFH10N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 10A TO-24... |
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