IXFH67N10Q

Vgs(th) (Max) @ Id:	4V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AD (IXFH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	260nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	25 mOhm @ 33.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	67A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IntroductionThe IXFH67N10Q is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is capable of withstanding high voltages and delivering high switching speeds. It is capable of operating at high drain-source voltage and high drain-source current ratings, making it an ideal choice for a wide range of applications. This article will discuss the application field and working principle of the IXFH67N10Q.Application FieldThe IXFH67N10Q is ideal for use in high-voltage and high-current applications, such as in motor drives, solenoid and relay circuits, and DC-to-DC converters. It is also ideal for use in audio amplifiers and power supplies where it can be used to switch currents up to 100 Amps while providing low on-state resistance. Furthermore, the IXFH67N10Q is well-suited to low-noise, high-efficiency applications, such as in motor control circuits and switching regulators.Working PrincipleThe IXFH67N10Q is an N-channel MOSFET which operates on the principle of a depletion-mode semiconductor device. This device works by allowing electrons to move through a substrate material and deplete an area around the source and drain electrodes. A gate voltage then controls the current between the source and drain, making the IXFH67N10Q a voltage-controlled device. The IXFH67N10Q is capable of switching currents up to 100 Amps and, when operated in a drain-source configuration, can withstand up to 600 Volts. Additionally, the IXFH67N10Q is capable of handling high frequency applications due to its low gate threshold voltage and fast switching speeds. ConclusionIn conclusion, the IXFH67N10Q is an ideal choice for high-voltage, high-current and high-frequency applications. It is also suitable for low-noise, high-efficiency applications. Due to its fast switching speeds and low gate threshold voltage, the IXFH67N10Q can provide reliable and effective operation in a wide variety of applications.

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