Allicdata Part #: | IXFH44N50Q3-ND |
Manufacturer Part#: |
IXFH44N50Q3 |
Price: | $ 9.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 44A TO-247 |
More Detail: | N-Channel 500V 44A (Tc) 830W (Tc) Through Hole TO-... |
DataSheet: | IXFH44N50Q3 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 8.68539 |
Specifications
Vgs(th) (Max) @ Id: | 6.5V @ 4mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXFH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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The IXFH44N50Q3 is a type of power field-effect transistor (FET). It belongs to the category of single metal–oxide–semiconductor field-effect transistors (MOSFETs). This device is designed for use in high-speed switching applications. This device has been optimized for low on-resistance while still providing adequate gains.The IXFH44N50Q3 is characterized by a wide operating temperature range, making it suitable for use in extreme environments. It also has a low on-resistance (RDS(on)) of 44mΩ and a low gate charge (Qg) of 8.2nC. Moreover, it has an avalanche rating of 150V and increased gate drive robustness for rugged applications. These features make the IXFH44N50Q3 ideal for industrial applications, such as power switching, motor control, and lighting systems.The IXFH44N50Q3 is an N-Channel enhancement mode MOSFET. It has an internally connected source to drain diode. The current flow through the device is controlled by applying a gate voltage which changes the channel resistance between the source and the drain terminal. When the voltage level of the gate is greater than the voltage at the source, the channel is open and drain current will flow. When the gate voltage is below the source voltage, the channel is closed, and no current flow occurs.The IXFH44N50Q3 can be used in various applications such as motor control and power switching. In motor control, MOSFETs are used to regulate the speed of the motor by providing appropriate gate signals. IXFH44N50Q3’s high-speed switching capability, low on-resistance, and robustness make it well-suited for this application.The IXFH44N50Q3 can also be used as a power switch and load controller in power conversion systems. The IXFH44N50Q3’s low on-resistance allows it to efficiently flow current while maintaining a low loss factor. Furthermore, its avalanche rating protects the device from reaching destructive voltages under fault conditions.In addition, the IXFH44N50Q3 can be used in lighting systems, where it can be used to efficiently control the current flow to the LED. The low on-resistance and controllability of the MOSFETs makes them advantageous over traditional bulbs in terms of lighting efficiency. The IXFH44N50Q3 is also used in switching power supplies and audio amplifiers.In conclusion, the IXFH44N50Q3 is a high-speed N-Channel power MOSFET that can be used in a variety of applications. It features a low on-resistance, robust gate drive, and high avalanche rating. Additionally, its wide operating temperature range makes it suitable for use in extreme environments. Thus, IXFH44N50Q3 is a suitable choice for applications such as motor control, power switching, and LED lighting systems.The specific data is subject to PDF, and the above content is for reference
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