IXFR24N100Q3 Allicdata Electronics
Allicdata Part #:

IXFR24N100Q3-ND

Manufacturer Part#:

IXFR24N100Q3

Price: $ 14.63
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 18A ISOPLUS247
More Detail: N-Channel 1000V 18A (Tc) 500W (Tc) Through Hole IS...
DataSheet: IXFR24N100Q3 datasheetIXFR24N100Q3 Datasheet/PDF
Quantity: 1000
30 +: $ 13.30180
Stock 1000Can Ship Immediately
$ 14.63
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 490 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFR24N100Q3 is a high-performance, low-gate-charge, N-channel IGBT (insulated gate bipolar transistor) designed for low-frequency power applications. It is part of IXYS’s IXFR family of IGBTs, which is designed to deliver outstanding performance with low gate charges and quick turn-on times. The IXFR24N100Q3 is particularly suitable for power switching applications like motor controllers, AC-DC converters, switched-mode power supplies, and rectifier bridges.

The IXFR24N100Q3 is a single IGBT device, meaning a single N-channel IGBT, connected to a gate driver, that switches between an N-channel and a P-channel MOSFET. The device is composed of two distinct blocks; an N-channel MOSFET and a P-channel MOSFET, each with its own electrolyte gate. When the gate voltage is applied, it switches from one MOSFET to the other, allowing for fast, low-loss switching. The result is an efficient and cost-effective switching solution.

The IXFR24N100Q3 is rated for a surge current of up to 24 A and a continuous current of up to 8 A. It also comes with a widest operating temperature range of -55° C to +150° C and a breakdown voltage of 600V. As a result, the IXFR24N100Q3 is suitable for a variety of applications, including automotive, industrial, and consumer applications.

The gates of the IXFR24N100Q3 are controlled by an external driver, and the device is configured for a low gate charge, allowing for quick and responsive gate switching. This reduces the time needed for a full turn-on/off cycle and provides good thermal management, allowing for increased power efficiency.

The IXFR24N100Q3 has many advantages over traditional IGBTs, including improved efficiency, low power consumption, and fast turn-on/off times. It also features improved isolation, which reduces EMI and noise. As a result, the IXFR24N100Q3 is suitable for a variety of power switching applications, including motor controllers, AC-DC converters, switched-mode power supplies, and rectifier bridges.

Overall, the IXFR24N100Q3 is a high-performance, low-gate-charge, N-Channel IGBT with a wide operating temperature range and low gate charging time. It is suitable for a variety of power switching applications, including motor controllers, AC-DC converters, switched-mode power supplies, and rectifier bridges. The device offers an efficient and cost-effective switching solution, with low power consumption, quick turn-on/off times, and improved noise reduction.

The specific data is subject to PDF, and the above content is for reference

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