IXFR21N100Q Allicdata Electronics
Allicdata Part #:

IXFR21N100Q-ND

Manufacturer Part#:

IXFR21N100Q

Price: $ 13.57
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1KV 18A ISOPLUS247
More Detail: N-Channel 1000V 18A (Tc) 350W (Tc) Through Hole IS...
DataSheet: IXFR21N100Q datasheetIXFR21N100Q Datasheet/PDF
Quantity: 1000
30 +: $ 12.32890
Stock 1000Can Ship Immediately
$ 13.57
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR21N100Q is a chemical field effect transistor (also known as a FET) designed to be used in a calculation system employing relative-speed measurement by means of a flow control valve. Working in a bi-directional flow application, its purpose is to control operations in low power applications. It is a single charged device, which means that a single current has to pass through it to switch its output devices on or off.

The IXFR21N100Q works on the principle of field-effect, which is the ability of certain materials to exhibit an electrical response when exposed to an electric field. This electric field causes the material to rearrange itself and form a channel that is able to transfer electric current. This is the working principle of a FET. It has a source, gate, and drain terminal, and the electric current is controlled by the voltages from the source and gate terminals.

When an electric field is applied to the gate terminal, it causes the electrons in the source and drain to rearrange themselves, forming a conduction channel or "channel". This flow of electrons through the conduction channel is then used to control the output device. The current flow can then be changed by changing the voltage levels of the gate terminal and the source. The IXFR21N100Q is designed to be used in applications that make use of this type of switching operation.

The IXFR21N100Q is a power MOSFET, which means it can handle higher voltages and currents than a standard field-effect device. Its power rating is 21A and VDS is 100V, making it suitable for applications where higher currents or voltages are required. Its on-resistance is 0.2 ohms, making it a very low resistance device that can handle high power applications.

In addition to its power handling capabilities, the IXFR21N100Q also features low switching times. This means that the response time of the device is faster than most other types of FETs, which makes it ideal for applications that require rapid switching. This includes applications such as motor control, serial communication, and high-speed data transmission.

The IXFR21N100Q is a single-charge device, meaning it requires only one charge to switch the output device on or off. This is a great advantage over other FETs, as it eliminates the need for a separate charge-discharge cycle. This makes the IXFR21N100Q ideal for applications that require a fast response time and low power consumption.

Overall, the IXFR21N100Q is an ideal device for applications that require high voltages, currents, and low switching times. It is a versatile device that can be used in a wide range of applications, from motor control to high-speed data transmission. With its low resistance, it is able to handle higher power applications and its single-charge operation eliminates the need for multiple charges and discharges.

The specific data is subject to PDF, and the above content is for reference

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