IXFR55N50 Allicdata Electronics
Allicdata Part #:

IXFR55N50-ND

Manufacturer Part#:

IXFR55N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 48A ISOPLUS247
More Detail: N-Channel 500V 48A (Tc) 400W (Tc) Through Hole ISO...
DataSheet: IXFR55N50 datasheetIXFR55N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFR55N50 is an advanced MOSFETs device that’s designed to be used in a wide range of applications. Combining advanced low off-state leakage, fast switching speeds and robust linear performance, the IXFR55N50 is an ideal choice for most power management tasks. This article provides an overview of the IXFR55N50’s working principles and application fields.

The IXFR55N50 MOSFET

The IXFR55N50 MOSFET is a greatly-enhanced version of the earlier IXFR150N50 MOSFET. The IXFR55N50 single-gate MOSFET is a vertical-body transistor that ensures excellent current-handling performance, making it an ideal choice for a variety of high-reliability applications. Boasting a wide voltage rating, this device is good for most power management tasks. Its low on-resistance and high breakdown voltage features also make it useful for higher-efficiency power systems.

Working Principle

The IXFR55N50 MOSFET utilizes an advanced vertical-body double-diffused technology to achieve an increased current drive capability that allows it to deliver faster switching speeds. Its maximum drain-source voltage and gate-source voltage are rated at 55V and 18V respectively, which also allow it to operate at greater efficiency. In addition, it has excellent off-state leakage characteristics. When the IXFR55N50 is off, the device typically exhibits a maximum gate-source leakage current of only 5nA.

Application Fields

The IXFR55N50 is well-suited for a wide range of applications including AC motor control, industrial motor actuation, automated system control, and power management, just to name a few. Its low on-resistance and fast switching speed make it a great choice for switching and signal line applications, while its high voltage rating and off-state leakage capability make it an ideal pick for use in power management applications. In addition, the IXFR55N50’s ability to operate at higher voltages without requiring special drive circuitry makes it an attractive option for use in high-voltage applications.

Conclusion

The IXFR55N50 is a reliable and efficient single-gate MOSFET, which combines a wide range of enhanced features and is able to offer excellent performance for a variety of demanding applications. It has a highly-rated voltage and current-handling capabilities, and its low off-state leakage makes it an ideal choice for power management tasks. In addition, its fast switching speed and efficient gate drive are perfect for use in AC motor control, industrial motor actuation, automated system control, and various other applications.

The specific data is subject to PDF, and the above content is for reference

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