Allicdata Part #: | IXFT12N100Q-ND |
Manufacturer Part#: |
IXFT12N100Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 12A TO268 |
More Detail: | N-Channel 1000V 12A (Tc) 300W (Tc) Surface Mount T... |
DataSheet: | IXFT12N100Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFT12N100Q is a type of field effect transistor (FET) that is most commonly used in high-power switching applications and voltage control. It is a single-gate N-channel MOSFET, meaning it contains a layer of metal oxide along with an applied electric field. This type of transistor has a wide array of features that make it attractive to a number of different industries.
Design
The IXFT12N100Q is designed with a Super Junction Structure, which is the highest-performing type of device developed for power control. It is particularly well-suited for applications with low input capacitance and drain-to-source breakdown voltage that require high switching speed and industry-leading performance. The design of the Super Junction Structure includes four horizontal layers of alternatingly doped cells that create a balanced resistance for increased current flow and enhanced switching performance.
Features
The IXFT12N100Q has a wide range of features that are beneficial for high-power switching applications. Some of the more prominent features of this transistor include a low on-state resistance (RDS(on)), a drain-source voltage rating up to 1000 V, and a breakdown voltage of 800 V. Additionally, the IXFT12N100Q boasts an on-state power loss rating that is significantly lower than other types of transistors. This makes the device well-suited for power management, motor control, and various other DC-DC power conversion circuits.
Applications
The IXFT12N100Q is commonly used in a variety of high-power switching applications, such as power supplies, motor control, and home appliances. It is also used in solar inverters, LED lights, automated manufacturing systems, railway and automotive applications, and industrial automation systems. Furthermore, the IXFT12N100Q is suitable for use in high-voltage circuit protection, high-frequency switching circuits, and high-efficiency DC-DC power supplies.
Working Principle
The IXFT12N100Q operates under the principle of field-effect transistor (FET) action. FETs are transistors that are made up of negatively doped semiconductor materials and utilizes an electric field to control the current flow between a source and a drain. When a voltage is applied between the source and gate, a thin layer of negative charge is formed in the MOSFET channel that acts as an insulator and prevents current from flowing between the source and drain. This allows the FET to be used as an amplifier or switch in order to control the current flow in a circuit.
Conclusion
The IXFT12N100Q is an advanced field effect transistor (FET) that is most commonly used in high-power switching applications and voltage control. It is designed with a Super Junction Structure and features a low on-state resistance, a drain-source voltage rating up to 1000 V, and a breakdown voltage of 800 V. Additionally, this type of transistor has a wide variety of applications, including power supplies, motor control, and home appliances. Ultimately, the IXFT12N100Q operates under the principle of FET action and can be used as an amplifier or switch in order to regulate the current flow in a circuit.
The specific data is subject to PDF, and the above content is for reference
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