IXFT20N80Q

Vgs(th) (Max) @ Id:	4.5V @ 4mA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5100pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	200nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	420 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IXFT20N80Q is an N-Channel Field-Effect Transistor (FET) which is used in high-speed switching applications due to its excellent resistance-capacitance characteristics. This FET is particularly well-suited for use in high-density, low-power switching applications such as those found in power supplies, dc-dc converters and motor controllers. To get the most out of the device and make sure it is used safely and effectively, it is important to understand its working principle and application field.

Working Principle

The IXFT20N80Q works on a principle known as \'enhancement-mode\' operation. This means that the transistor is designed to be \'off\' until a voltage is applied to the gate. When the voltage applied to the gate is increased, a control current flows through the gate and the transistor is switched \'on\'. This swiching provides for low input impedance and high switching speeds.When the voltage applied to the gate is decreased, the control current decreases, and the transistor switches \'off\'. The switching off of the transistor is also done with a high speed. The typical turn-on time is less than 5µs and the typical turn-off time is less than 5 µs.

Application Field

The IXFT20N80Q is particularly suited to switching applications involving high currents, high speeds and low power loss. The transistor is capable of handling up to 20 amps of current, making it ideal for applications such as high-density DC-DC converters, motor controllers and power supplies.The transistor is also suitable for high-speed switching, as it has a low output impedance and a fast turn-on/turn-off time. This makes it ideal for use in switching regulators and “instant-on” type circuits. In addition to its use in switching applications, the IXFT20N80Q is also applicable for static applications such as high-side drivers and level shifters. The low output impedance of the transistor makes it well-suited for voltage-related applications such as these.

Conclusion

In conclusion, the IXFT20N80Q is an N-Channel Field-Effect Transistor (FET) which is used in high-speed switching applications due to its excellent resistance-capacitance characteristics. The device works on a principle known as \'enhancement-mode\' operation, which means that the transistor is designed to be \'off\' until a voltage is applied to the gate. It is best suited to switching applications such as DC-DC converters, motor controllers and power supplies and is also suitable for static applications such as high-side drivers and level shifters.

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