IXFT80N10Q

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The IXFT80N10Q is a popular high-voltage, power MOSFET that is used commonly in many electronic devices. The device is a single, N-channel insulated gate field effect transistor (IGFET), which offers high efficiency and low on-state resistance.

These FETs are designed to provide an efficient and low-power switching solution for high-voltage applications. This is often used in power conversion, DC and AC motor control, as well as many other applications that require a high-efficiency, low on-state resistance (RDSon), MOSFET.

Application Field:

The IXFT80N10Q can be used in a variety of high-voltage applications, including:

• DC and AC motor control
• Power conversion
• Power line filtering
• Protection against over-voltage, over-current and short-circuiting
• Power management

Working Principle:

The IXFT80N10Q is a Field-Effect Transistor (FET). As the name implies, FETs contain an insulated gate, which is used to control the voltage and current in the device. The word “Field” in FET refers to the electric field that is generated at the gate, which changes the resistance of the FET when it is turned on or off. When the gate voltage of the FET is above a certain threshold (called the threshold voltage), then the FET is turned \'on\' and it allows current to flow through it. When the gate voltage is below the threshold voltage, then the FET is turned \'off\' and it prevents current from flowing through it.

In the case of an N-channel FET, as it is with the IXFT80N10Q, the gate voltage must be more positive than the source voltage for the FET to be in its on-state. When the gate voltage is more negative than the source voltage, then the FET is in its off-state. The resistance of the FET when it is in the on-state is called RDSON. The RDSON of the IXFT80N10Q is very low, so it is particularly suitable for high-efficiency applications.

The IXFT80N10Q is also designed with a special feature called enhanced Avalanche Ruggedness (EAR). This is a special device architecture that allows it to withstand higher voltages than conventional FETs, making it ideal for applications that require high-voltage protection.

The IXFT80N10Q is also designed to provide protection against ESD (Electro-Static Discharge) and has a higher ESD rating than most other commercially available FETs. This makes it well suited for applications that must operate in harsh environments.

Overall, the IXFT80N10Q is a highly reliable and efficient power MOSFET that is suitable for a wide range of applications from motor control to power line filtering. Its low RDSON and enhanced Avalanche Ruggedness make it particularly suitable for high-voltage applications, while its ESD protection ensures that it can operate in more rugged environments.

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